Optical investigations on the surfactant effects of Sb on InGaAsN multiple quantum wells grown by MOVPE

In this report, the optical properties of the InGaAsN triple quantum wells were significantly improved by applying TMSb surfactant flow before the growth of InGaAsN layer. The PL intensities of the Sb-treated samples were improved by around two times and the line width of the emission spectrum was r...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2007, Vol.298, p.145-149
Hauptverfasser:	Chen, W.C., Su, Y.K., Chuang, R.W., Tsai, M.C., Cheng, K.Y., Wang, Y.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Photoluminescence A3. Organometallic vapor phase epitaxy A3. Quantum well B1. InGaAsN B2. Semiconducting III–V materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Nanoscale materials and structures: fabrication and characterization Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Other topics in nanoscale materials and structures Physics Quantum wells Vapor phase epitaxy growth from vapor phase
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!