Preparation of Oriented Aluminum Nitride Thin Films on Polyimide Films and Piezoelectric Response with High Thermal Stability and Flexibility

c‐Axis oriented aluminum nitride (AlN) thin films are successfully prepared on amorphous polyimide films by radiofrequency magnetron reactive sputtering at room temperature. Structural analysis shows that the AlN films have a wurtzite structure and consist of c‐axis oriented columnar grains about 10...

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Veröffentlicht in:	Advanced functional materials 2007-02, Vol.17 (3), p.458-462
Hauptverfasser:	Akiyama, M., Morofuji, Y., Kamohara, T., Nishikubo, K., Ooishi, Y., Tsubai, M., Fukuda, O., Ueno, N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride Piezoelectrics Polyimides Thin films
Online-Zugang:	Volltext
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