Optical properties of ZnO thin film on γ-LiAlO2 substrate grown by pulsed laser deposition
Optical properties were investigated of ZnO thin films grown on (100) D*g-LiAlO2 (LAO) substrates by pulsed laser deposition method. C-axis oriented ZnO film was grown on (100) LAO substrate at the substrate temperature of 550 DDGC. The transmittances of the films were over 85%. Peaks attributed to...
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Veröffentlicht in: | Thin solid films 2006-02, Vol.496 (2), p.205-207 |
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creator | Zou, Jun Zhou, Shengming Xia, Changtai Zhang, Xia Su, Fenglian Peng, Guanliang Li, Xiaomin Xu, Jun |
description | Optical properties were investigated of ZnO thin films grown on (100) D*g-LiAlO2 (LAO) substrates by pulsed laser deposition method. C-axis oriented ZnO film was grown on (100) LAO substrate at the substrate temperature of 550 DDGC. The transmittances of the films were over 85%. Peaks attributed to excitons were seen in the absorption spectra, indicating that the thin films have high crystallinity. Photoluminescence spectra were observed at room temperature; the peak at 550 nm is ascribed to oxygen vacancies in the ZnO films caused by the diffusion of Li from the substrate into the film during deposition. |
doi_str_mv | 10.1016/j.tsf.2005.08.315 |
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C-axis oriented ZnO film was grown on (100) LAO substrate at the substrate temperature of 550 DDGC. The transmittances of the films were over 85%. Peaks attributed to excitons were seen in the absorption spectra, indicating that the thin films have high crystallinity. 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C-axis oriented ZnO film was grown on (100) LAO substrate at the substrate temperature of 550 DDGC. The transmittances of the films were over 85%. Peaks attributed to excitons were seen in the absorption spectra, indicating that the thin films have high crystallinity. 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C-axis oriented ZnO film was grown on (100) LAO substrate at the substrate temperature of 550 DDGC. The transmittances of the films were over 85%. Peaks attributed to excitons were seen in the absorption spectra, indicating that the thin films have high crystallinity. Photoluminescence spectra were observed at room temperature; the peak at 550 nm is ascribed to oxygen vacancies in the ZnO films caused by the diffusion of Li from the substrate into the film during deposition.</abstract><cop>Lausanne</cop><pub>Elsevier Science</pub><doi>10.1016/j.tsf.2005.08.315</doi><tpages>3</tpages></addata></record> |
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subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Ii-vi semiconductors Laser deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics |
title | Optical properties of ZnO thin film on γ-LiAlO2 substrate grown by pulsed laser deposition |
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