Parameters-dependent nonlinear absorptions in InGaN/GaN MQW and GaN film
The optical nonlinearities of an InGaN/GaN multiple quantum well (MQW) and a GaN film were experimentally investigated by using femtosecond Z-scan method in this paper. It was observed that the InGaN/GaN MQW displays a nonlinear saturable absorption (SA) effect and the nonlinear absorption coefficie...
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| Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2005-12, Vol.370 (1), p.195-199 |
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| container_title | Physica. B, Condensed matter |
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| creator | Wen, Yuan Xiong, Guiguang Wang, Ququan Chen, Daijian |
| description | The optical nonlinearities of an InGaN/GaN multiple quantum well (MQW) and a GaN film were experimentally investigated by using femtosecond Z-scan method in this paper. It was observed that the InGaN/GaN MQW displays a nonlinear saturable absorption (SA) effect and the nonlinear absorption coefficient
β was determined to be
-
5.5
×
1
0
3
cm
/
GW
; and the GaN film shows a reverse saturable absorption (RSA) effect and the
β is
7.5
×
1
0
3
cm
/
GW
. It is also found that the absorption cross sections and quantum confinement effect (QCE) give an influence on the SA of the InGaN/GaN MQW structure. |
| doi_str_mv | 10.1016/j.physb.2005.09.013 |
| format | Article |
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β was determined to be
-
5.5
×
1
0
3
cm
/
GW
; and the GaN film shows a reverse saturable absorption (RSA) effect and the
β is
7.5
×
1
0
3
cm
/
GW
. It is also found that the absorption cross sections and quantum confinement effect (QCE) give an influence on the SA of the InGaN/GaN MQW structure.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2005.09.013</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Absorption cross section ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; Nonlinear absorption ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Physics ; Quantum wells</subject><ispartof>Physica. B, Condensed matter, 2005-12, Vol.370 (1), p.195-199</ispartof><rights>2005 Elsevier B.V.</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-44d64959f235ac3722929a362624947ce6a172f994b476f9b47ba7e01becd4073</citedby><cites>FETCH-LOGICAL-c364t-44d64959f235ac3722929a362624947ce6a172f994b476f9b47ba7e01becd4073</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physb.2005.09.013$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17326338$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wen, Yuan</creatorcontrib><creatorcontrib>Xiong, Guiguang</creatorcontrib><creatorcontrib>Wang, Ququan</creatorcontrib><creatorcontrib>Chen, Daijian</creatorcontrib><title>Parameters-dependent nonlinear absorptions in InGaN/GaN MQW and GaN film</title><title>Physica. B, Condensed matter</title><description>The optical nonlinearities of an InGaN/GaN multiple quantum well (MQW) and a GaN film were experimentally investigated by using femtosecond Z-scan method in this paper. It was observed that the InGaN/GaN MQW displays a nonlinear saturable absorption (SA) effect and the nonlinear absorption coefficient
β was determined to be
-
5.5
×
1
0
3
cm
/
GW
; and the GaN film shows a reverse saturable absorption (RSA) effect and the
β is
7.5
×
1
0
3
cm
/
GW
. It is also found that the absorption cross sections and quantum confinement effect (QCE) give an influence on the SA of the InGaN/GaN MQW structure.</description><subject>Absorption cross section</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Nonlinear absorption</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</subject><subject>Physics</subject><subject>Quantum wells</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKu_wMte9LbbfG3SHDxI0bZQv0DxGLLZWUzZZtdkK_Tfm1rBmwPzcXjmHeZF6JLggmAiJuui_9jFqqAYlwVWBSbsCI3IVLKcElYeoxFWlOS8pOIUncW4ximIJCO0eDbBbGCAEPMaevA1-CHznW-dBxMyU8Uu9IPrfMycz5Z-bh4nKbOHl_fM-Drbz41rN-fopDFthIvfPkZv93evs0W-epovZ7er3DLBh5zzWnBVqoay0lgmKVVUGSaooFxxaUEYImmjFK-4FI1KtTISMKnA1hxLNkbXB90-dJ9biIPeuGihbY2Hbhs1VSWVRIgEsgNoQxdjgEb3wW1M2GmC9d41vdY_rum9axornVxLW1e_8iZa0zbBeOvi36pkVDA2TdzNgYP065eDoKN14C3ULoAddN25f-98A0Nmges</recordid><startdate>20051215</startdate><enddate>20051215</enddate><creator>Wen, Yuan</creator><creator>Xiong, Guiguang</creator><creator>Wang, Ququan</creator><creator>Chen, Daijian</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20051215</creationdate><title>Parameters-dependent nonlinear absorptions in InGaN/GaN MQW and GaN film</title><author>Wen, Yuan ; Xiong, Guiguang ; Wang, Ququan ; Chen, Daijian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-44d64959f235ac3722929a362624947ce6a172f994b476f9b47ba7e01becd4073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Absorption cross section</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Exact sciences and technology</topic><topic>Nonlinear absorption</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</topic><topic>Physics</topic><topic>Quantum wells</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wen, Yuan</creatorcontrib><creatorcontrib>Xiong, Guiguang</creatorcontrib><creatorcontrib>Wang, Ququan</creatorcontrib><creatorcontrib>Chen, Daijian</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wen, Yuan</au><au>Xiong, Guiguang</au><au>Wang, Ququan</au><au>Chen, Daijian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Parameters-dependent nonlinear absorptions in InGaN/GaN MQW and GaN film</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2005-12-15</date><risdate>2005</risdate><volume>370</volume><issue>1</issue><spage>195</spage><epage>199</epage><pages>195-199</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>The optical nonlinearities of an InGaN/GaN multiple quantum well (MQW) and a GaN film were experimentally investigated by using femtosecond Z-scan method in this paper. It was observed that the InGaN/GaN MQW displays a nonlinear saturable absorption (SA) effect and the nonlinear absorption coefficient
β was determined to be
-
5.5
×
1
0
3
cm
/
GW
; and the GaN film shows a reverse saturable absorption (RSA) effect and the
β is
7.5
×
1
0
3
cm
/
GW
. It is also found that the absorption cross sections and quantum confinement effect (QCE) give an influence on the SA of the InGaN/GaN MQW structure.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2005.09.013</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0921-4526 |
| ispartof | Physica. B, Condensed matter, 2005-12, Vol.370 (1), p.195-199 |
| issn | 0921-4526 1873-2135 |
| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Absorption cross section Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Nonlinear absorption Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Quantum wells |
| title | Parameters-dependent nonlinear absorptions in InGaN/GaN MQW and GaN film |
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