Manipulating Ge quantum dots on ultrathin SixGe1-x oxide films using scanning tunneling microscope tips

Manipulating Ge quantum dots on ultrathin SixGe1-x oxide films using scanning tunneling microscope tips

Germanium quantum dots (QDs) were extracted from ultrathin SixGe1-x oxide films using scanning tunneling microscope (STM) tips. The extraction was most efficiently performed at a positive sample bias voltage of +5.0V. The tunneling current dependence of the extraction efficiency was explained by the...

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Veröffentlicht in:Surface science 2006-09, Vol.600 (17), p.3456-3460
Hauptverfasser: NAKAMURA, Yoshiaki, TAKATA, Hiroyuki, MASADA, Akiko, ICHIKAWA, Masakazu
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Sprache:eng
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Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Physics
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container_issue 17
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container_title Surface science
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creator NAKAMURA, Yoshiaki
TAKATA, Hiroyuki
MASADA, Akiko
ICHIKAWA, Masakazu
description Germanium quantum dots (QDs) were extracted from ultrathin SixGe1-x oxide films using scanning tunneling microscope (STM) tips. The extraction was most efficiently performed at a positive sample bias voltage of +5.0V. The tunneling current dependence of the extraction efficiency was explained by the electric field evaporation transfer mechanism for positive Ge ions from QDs to STM tips. Ge QDs (7nm) were formed and isolated spatially by extracting the surrounding Ge QDs with an ultrahigh density of > 1012cm-2. Scanning tunneling spectroscopy of the spatially-isolated QDs revealed that QDs with an ultrahigh density are electrically-isolated from the adjacent dots.
doi_str_mv 10.1016/j.susc.2006.06.035
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Physics
title Manipulating Ge quantum dots on ultrathin SixGe1-x oxide films using scanning tunneling microscope tips
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