Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy

Propagation and nucleation of basal plane dislocations (BPDs) in 4H-SiC(000-1) and (0001) epitaxy were compared. Synchrotron reflection X-ray topography was performed before and after epitaxial growth to classify the BPDs into those propagated from the substrate into the epilayer and those nucleated...

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Veröffentlicht in:	Materials science forum 2006-10, Vol.527-529, p.231-234
Hauptverfasser:	Ishii, R., Sugawara, Yoshitaka, Kamata, Isaho, Nakayama, Koji, Miyanagi, Toshiyuki, Tsuchida, Hidekazu, Nakamura, Tomonori
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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