Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation

Ternary Ti-Si-N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into TixSiy substrate. This leads to the formation of Ti-N and Si-N compounds in the ternary film. Diffusion of copper in the barrier layer after annealin...

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Veröffentlicht in:	Applied surface science 2006-11, Vol.253 (2), p.530-534
Hauptverfasser:	Ee, Y.C., Chen, Z., Law, S.B., Xu, S., Yakovlev, N.L., Lai, M.Y.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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