Preparation and properties of clean Si3N4 surfaces

In situ chemical methods for preparing atomically-clean surfaces of Si3N4 thin films in ultra-high vacuum (UHV) have been studied using X-ray and ultraviolet photoemission, electron energy loss and Auger electron spectroscopies. Prior to the UHV studies, the films (grown ex situ on Si(100) wafers by...

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Veröffentlicht in:	Applied surface science 2004-08, Vol.235 (4), p.406-419
Hauptverfasser:	BERMUDEZ, V. M, PERKINS, F. K
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Physics
Online-Zugang:	Volltext
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