Investigation of optical and electrical properties of Mg-doped p-InxGa1-xN, p-GaN and p-AlyGa1-yN grown by MOCVD

Mg-doped p-InxGa1-xN (0x0.045) and p-AlyGa1-yN (0y0.095) layers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). We investigated the activation energy of Mg dopant in Mg-doped p-InGaN, p-GaN and p-AlGaN, as confirmed by PL emission lines of the band to impurity tr...

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Veröffentlicht in:	Journal of crystal growth 2004-12, Vol.272 (1-4), p.455-459
Hauptverfasser:	LEE, Sung-Nam, JOONGKON SON, TAN SAKONG, WONSEOK LEE, HOSUN PAEK, EUIJOON YOON, JIYOUNG KIM, CHO, Yong-Hoon, OKHYUN NAM, YONGJO PARK
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Iii-v semiconductors Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics
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