Development of a piezoelectric lead titanate thin film process on silicon substrates by high rate gas flow sputtering
Polycrystalline lead titanate (PT) thin films in the range of 3–6 μm were crack and void free deposited on silicon substrates in a high rate gas flow sputtering process. Gas flow sputtering uses the hollow cathode effect which results into high deposition rates of about 120 nm/min. (1 1 1) Textured...
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| Veröffentlicht in: | Sensors and actuators. A. Physical. 2007-01, Vol.133 (1), p.250-258 |
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| container_title | Sensors and actuators. A. Physical. |
| container_volume | 133 |
| creator | Jacobsen, H. Jung, Th Ortner, K. Schiffmann, K.I. Quenzer, H.-J. Wagner, B. |
| description | Polycrystalline lead titanate (PT) thin films in the range of 3–6
μm were crack and void free deposited on silicon substrates in a high rate gas flow sputtering process. Gas flow sputtering uses the hollow cathode effect which results into high deposition rates of about 120
nm/min. (1
1
1) Textured platinum was used as bottom electrode to assist the nucleation of PT.
Material properties of the PT thin films as well as the Pt bottom electrode like topography, morphology, chemical composition, and structure are evaluated. The sputtered PT layers show clearly Perovskite traces in XRD patterns, even the (1
1
1) texture of the Pt is partial transferred. The most difficult part is to fulfil the empirical formula PbTiO
3. This problem is solved by stabilising the process parameters. It was shown that the temperature has got enormous influence at the stoichiometry. |
| doi_str_mv | 10.1016/j.sna.2006.03.027 |
| format | Article |
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μm were crack and void free deposited on silicon substrates in a high rate gas flow sputtering process. Gas flow sputtering uses the hollow cathode effect which results into high deposition rates of about 120
nm/min. (1
1
1) Textured platinum was used as bottom electrode to assist the nucleation of PT.
Material properties of the PT thin films as well as the Pt bottom electrode like topography, morphology, chemical composition, and structure are evaluated. The sputtered PT layers show clearly Perovskite traces in XRD patterns, even the (1
1
1) texture of the Pt is partial transferred. The most difficult part is to fulfil the empirical formula PbTiO
3. This problem is solved by stabilising the process parameters. It was shown that the temperature has got enormous influence at the stoichiometry.</description><identifier>ISSN: 0924-4247</identifier><identifier>EISSN: 1873-3069</identifier><identifier>DOI: 10.1016/j.sna.2006.03.027</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Gas flow sputtering ; Hollow cathode ; MEMS ; PZT</subject><ispartof>Sensors and actuators. A. Physical., 2007-01, Vol.133 (1), p.250-258</ispartof><rights>2006 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-d34178aa31dd1a0d59b86d6c043d7231244ca0e8f03f0c3e1be47a9c3067e0d33</citedby><cites>FETCH-LOGICAL-c328t-d34178aa31dd1a0d59b86d6c043d7231244ca0e8f03f0c3e1be47a9c3067e0d33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0924424706002743$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Jacobsen, H.</creatorcontrib><creatorcontrib>Jung, Th</creatorcontrib><creatorcontrib>Ortner, K.</creatorcontrib><creatorcontrib>Schiffmann, K.I.</creatorcontrib><creatorcontrib>Quenzer, H.-J.</creatorcontrib><creatorcontrib>Wagner, B.</creatorcontrib><title>Development of a piezoelectric lead titanate thin film process on silicon substrates by high rate gas flow sputtering</title><title>Sensors and actuators. A. Physical.</title><description>Polycrystalline lead titanate (PT) thin films in the range of 3–6
μm were crack and void free deposited on silicon substrates in a high rate gas flow sputtering process. Gas flow sputtering uses the hollow cathode effect which results into high deposition rates of about 120
nm/min. (1
1
1) Textured platinum was used as bottom electrode to assist the nucleation of PT.
Material properties of the PT thin films as well as the Pt bottom electrode like topography, morphology, chemical composition, and structure are evaluated. The sputtered PT layers show clearly Perovskite traces in XRD patterns, even the (1
1
1) texture of the Pt is partial transferred. The most difficult part is to fulfil the empirical formula PbTiO
3. This problem is solved by stabilising the process parameters. It was shown that the temperature has got enormous influence at the stoichiometry.</description><subject>Gas flow sputtering</subject><subject>Hollow cathode</subject><subject>MEMS</subject><subject>PZT</subject><issn>0924-4247</issn><issn>1873-3069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9kEFP3DAQhS3USt1SfgA3n3pLOo6zcaKeEIWChMQFzpbXnux65Y2Dx6Givx6vljOnp5Hee5r3MXYpoBYgul_7miZTNwBdDbKGRp2xleiVrCR0wxe2gqFpq7Zp1Tf2nWgPAFIqtWLLH3zFEOcDTpnHkRs-e_wfMaDNyVse0DiefTaTycjzzk989OHA5xQtEvE4cfLB26MuG8qp2Ihv3vjOb3f8ePGtIT6G-I_TvOSMyU_bH-zraALhxYees-fbm6fru-rh8e_99dVDZWXT58rJVqjeGCmcEwbcetj0nesstNKpRoqmba0B7EeQI1iJYoOtMoMtmxWCk_Kc_Tz1lndfFqSsD54shmAmjAvpZljDukArRnEy2hSJEo56Tv5g0psWoI-A9V4XwPoIWIPUBXDJ_D5lsCx49Zg0WY-TRedToadd9J-k3wGZgYWt</recordid><startdate>20070108</startdate><enddate>20070108</enddate><creator>Jacobsen, H.</creator><creator>Jung, Th</creator><creator>Ortner, K.</creator><creator>Schiffmann, K.I.</creator><creator>Quenzer, H.-J.</creator><creator>Wagner, B.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20070108</creationdate><title>Development of a piezoelectric lead titanate thin film process on silicon substrates by high rate gas flow sputtering</title><author>Jacobsen, H. ; Jung, Th ; Ortner, K. ; Schiffmann, K.I. ; Quenzer, H.-J. ; Wagner, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-d34178aa31dd1a0d59b86d6c043d7231244ca0e8f03f0c3e1be47a9c3067e0d33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Gas flow sputtering</topic><topic>Hollow cathode</topic><topic>MEMS</topic><topic>PZT</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jacobsen, H.</creatorcontrib><creatorcontrib>Jung, Th</creatorcontrib><creatorcontrib>Ortner, K.</creatorcontrib><creatorcontrib>Schiffmann, K.I.</creatorcontrib><creatorcontrib>Quenzer, H.-J.</creatorcontrib><creatorcontrib>Wagner, B.</creatorcontrib><collection>CrossRef</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Sensors and actuators. A. Physical.</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jacobsen, H.</au><au>Jung, Th</au><au>Ortner, K.</au><au>Schiffmann, K.I.</au><au>Quenzer, H.-J.</au><au>Wagner, B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Development of a piezoelectric lead titanate thin film process on silicon substrates by high rate gas flow sputtering</atitle><jtitle>Sensors and actuators. A. Physical.</jtitle><date>2007-01-08</date><risdate>2007</risdate><volume>133</volume><issue>1</issue><spage>250</spage><epage>258</epage><pages>250-258</pages><issn>0924-4247</issn><eissn>1873-3069</eissn><abstract>Polycrystalline lead titanate (PT) thin films in the range of 3–6
μm were crack and void free deposited on silicon substrates in a high rate gas flow sputtering process. Gas flow sputtering uses the hollow cathode effect which results into high deposition rates of about 120
nm/min. (1
1
1) Textured platinum was used as bottom electrode to assist the nucleation of PT.
Material properties of the PT thin films as well as the Pt bottom electrode like topography, morphology, chemical composition, and structure are evaluated. The sputtered PT layers show clearly Perovskite traces in XRD patterns, even the (1
1
1) texture of the Pt is partial transferred. The most difficult part is to fulfil the empirical formula PbTiO
3. This problem is solved by stabilising the process parameters. It was shown that the temperature has got enormous influence at the stoichiometry.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.sna.2006.03.027</doi><tpages>9</tpages></addata></record> |
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| ispartof | Sensors and actuators. A. Physical., 2007-01, Vol.133 (1), p.250-258 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Gas flow sputtering Hollow cathode MEMS PZT |
| title | Development of a piezoelectric lead titanate thin film process on silicon substrates by high rate gas flow sputtering |
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