Investigation of optimized ohmic contact of direct ITO layer with synchrotron radiation analysis

With application of the current transport enhanced layer (CTEL) on the top of p‐type GaN, we optimized process conditions, which show the contact resistance of 1.43x10–3 Ω·cm2, using ITO contact layer that has advantages in the enhancement of light extraction efficiency. High‐resolution near edge X‐...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physica status solidi. C 2006-06, Vol.3 (6), p.1828-1831
Hauptverfasser:	Ha, Jun-Seok, Jang, Jun-Ho, Joo, Min-Ho, Kim, Tae-Hyeong, Park, Kyu-Ho, Shin, Hyun-Joon, Lee, Jeong-Soo, Jung, Jong-Jae
Format:	Artikel
Sprache:	eng
Schlagworte:	73.40.Kp 73.61.Ey 78.70.Dm
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!