Caesium/xenon dual beam depth profiling: Velocity of the sputtered atom and ionization probability
In this work, a caesium/xenon co-sputtering gun was used to perform depth profiles of a RhSi layer with varying caesium beam concentration. The positive ion yields were monitored with respect to the varying work function of the solid and the intensities of the ions were plotted with respect to the c...
Gespeichert in:
Veröffentlicht in: | Applied surface science 2006-07, Vol.252 (19), p.6440-6443 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!