A Physical Model for Dishing during Metal CMP

A physically based model for dishing during metal chemical mechanical polishing (CMP) is presented. The control of dishing is important for advanced damascene metal interconnect technologies. However, the modeling of dishing is still in an initial phase. Material removal mainly takes place at the co...

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Veröffentlicht in:	Journal of the Electrochemical Society 2003-11, Vol.150 (11), p.G689-G693
Hauptverfasser:	Nguyen, V H, Daamen, R, Van Kranenburg, H, Van Der Velden, P, Woerlee, P H
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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