A novel transparent ohmic contact of indium tin oxide to n-type GaN

A novel transparent indium tin oxide (ITO) ohmic contact to n-type GaN (dopant concentration of 2 × 10 17 cm −3) with a specific contact resistance of 4.2 × 10 −6 Ω cm 2 has been obtained. The interfacial properties involving with ITO to n-GaN ohmic contact are different from those of previous repor...

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Veröffentlicht in:	Microelectronic engineering 2005, Vol.77 (1), p.71-75
Hauptverfasser:	Hwang, J.D., Yang, G.H., Chang, W.T., Lin, C.C., Chuang, R.W., Chang, S.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology GaN Interfaces ITO Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Specific contact resistance
Online-Zugang:	Volltext
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