Phonon mechanism of mobility equilibrium fluctuation and properties of 1/ f-noise

The main mechanisms of the generation of the equilibrium fluctuations of the electron mobility in homogeneous and non-degenerate semiconductors are studied. It is proven that the mobility fluctuations are related to energy fluctuations and are conditioned by random non-elastic scattering and generat...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2006-06, Vol.382 (1), p.65-70
Hauptverfasser: Melkonyan, S.V., Aroutiounian, V.M., Gasparyan, F.V., Asriyan, H.V.
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Sprache:eng
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