Phonon mechanism of mobility equilibrium fluctuation and properties of 1/ f-noise
The main mechanisms of the generation of the equilibrium fluctuations of the electron mobility in homogeneous and non-degenerate semiconductors are studied. It is proven that the mobility fluctuations are related to energy fluctuations and are conditioned by random non-elastic scattering and generat...
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Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2006-06, Vol.382 (1), p.65-70 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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