Intrinsic conductive oxide–p-InSe solar cells
For the optimization of parameters of intrinsic oxide–p-InSe solar cells (SC), the influence of long-term (for 24–120h) thermal oxidation of crystal substrates in open air was investigated. We have found an essential improvement of photoelectric parameters, and the greatest values of open-circuit vo...
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| Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2004-06, Vol.109 (1-3), p.252-255 |
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| container_title | Materials science & engineering. B, Solid-state materials for advanced technology |
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| creator | Kovalyuk, Z.D Katerynchuk, V.M Savchuk, A.I Sydor, O.M |
| description | For the optimization of parameters of intrinsic oxide–p-InSe solar cells (SC), the influence of long-term (for 24–120h) thermal oxidation of crystal substrates in open air was investigated. We have found an essential improvement of photoelectric parameters, and the greatest values of open-circuit voltage and short-circuit current of SC were obtained for the p-InSe substrates oxidized at 450°C for 96h. It is established that the changes in the photosensitivity spectra are caused by formation of additional oxide phases. The electrical characteristics of such SC are affected by a series resistance, which appears at formation of the charge-collecting contacts on p-InSe substrates. This resistance effects simultaneously on the SC load characteristics. |
| doi_str_mv | 10.1016/j.mseb.2003.10.074 |
| format | Article |
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| ispartof | Materials science & engineering. B, Solid-state materials for advanced technology, 2004-06, Vol.109 (1-3), p.252-255 |
| issn | 0921-5107 1873-4944 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | InSe Intrinsic oxide Solar cell |
| title | Intrinsic conductive oxide–p-InSe solar cells |
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