InAsSb/InGaAs quantum nanostructures on InP (100) substrate: observation of 2.35 mum photoluminescence

A theoretical and experimental study of the electronic properties of InAsSb quantum dots (QDs) grown on InP substrate is presented. Unstrained bulk InAsSb presents a direct gap between 0.1 eV to 0.35 eV, suitable for mid infrared emitters (3-5 mum). However, strain and quantum confinement effects ma...

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Veröffentlicht in:	Physica status solidi. C 2006-03, Vol.3 (3), p.524-527
Hauptverfasser:	Dore, F, Cornet, C, Schliwa, A, Ballestar, A, Even, J, Bertru, N, Dehaese, O, Alghoraibi, I, Folliot, H, Piron, R, Corre, A Le, Loualiche, S
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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