RF MEMS dielectric sensitivity to electromagnetic radiation

SiO 2 and Si 3N 4 as well as other insulators are used in MEMS. However, their tendency for electrostatic charging diminishes the device reliability. The charging effect becomes significant when these devices are subjected to ionizing radiation. The irradiation induced charging depends on the nature of irradiation, the vicinal metal layers, and the metal–insulator interface properties. The sensitivity of RF MEMS to electromagnetic radiation is presented, taking into account the simulation of charge generation to device's structure with different insulating layer composition and thickness.