Antiferromagnetic phase in doped semiconductors near the insulator-metal phase transition

We show for n ‐type semiconductors, using Ge:As and 4H ‐SiC:N as examples, that the spin density measured by electron spin resonance (ESR) falls sharply near the insulator–metal (IM) transition. Two reasons might be responsible for this phenomenon: potential fluctuations with concentration of the el...

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Veröffentlicht in:	Physica status solidi. C 2006-02, Vol.3 (2), p.347-351
Hauptverfasser:	Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., Goloshchapov, S. I., Mokhov, E. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	71.30.+h 75.30.Hx 76.30.-v
Online-Zugang:	Volltext
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