Low voltage electroluminescence of terbium- and thulium-doped zinc oxide films
Strong interest in developing technology for visual information stimulates research for thin film electroluminescent devices. Here, for the first time, we report that thulium- and terbium-doped zinc oxide films are suitable for electroluminescence applications. Two different devices were assembled a...
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| Veröffentlicht in: | Journal of alloys and compounds 2006-07, Vol.418 (1), p.35-38 |
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| container_title | Journal of alloys and compounds |
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| creator | Lima, S.A.M. Davolos, M.R. Legnani, C. Quirino, W.G. Cremona, M. |
| description | Strong interest in developing technology for visual information stimulates research for thin film electroluminescent devices. Here, for the first time, we report that thulium- and terbium-doped zinc oxide films are suitable for electroluminescence applications. Two different devices were assembled as ITO/LiF/ZnO:RE/LiF/Al or ITO/SiO
2/ZnO:RE/SiO
2/Al, where ZnO:RE is a film of zinc oxide containing 10
at% of Tb
3+ or Tm
3+. Electroluminescence spectra show that besides a broad emission band with maximum around 650
nm assigned to ZnO, also emission lines from Tb
3+ at 484
nm (
5D
4
→
7F
6), 543
nm (
5D
4
→
7F
5), and 589
nm (
5D
4
→
7F
4), or from Tm
3+ at 478
nm (
1G
4
→
3H
6), and 511
nm (
1D
2
→
3H
5) were detected. Intensity of emission as function of applied voltage and current–voltage characteristic are shown and discussed. |
| doi_str_mv | 10.1016/j.jallcom.2005.10.066 |
| format | Article |
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2/ZnO:RE/SiO
2/Al, where ZnO:RE is a film of zinc oxide containing 10
at% of Tb
3+ or Tm
3+. Electroluminescence spectra show that besides a broad emission band with maximum around 650
nm assigned to ZnO, also emission lines from Tb
3+ at 484
nm (
5D
4
→
7F
6), 543
nm (
5D
4
→
7F
5), and 589
nm (
5D
4
→
7F
4), or from Tm
3+ at 478
nm (
1G
4
→
3H
6), and 511
nm (
1D
2
→
3H
5) were detected. Intensity of emission as function of applied voltage and current–voltage characteristic are shown and discussed.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2005.10.066</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Chemical synthesis ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronical transport ; Exact sciences and technology ; Luminescence ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Other semiconductors ; Physics ; Semiconductors ; Thin films</subject><ispartof>Journal of alloys and compounds, 2006-07, Vol.418 (1), p.35-38</ispartof><rights>2005 Elsevier B.V.</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c370t-19b8e0a6b9a7686878cb835360c2cee39aee1d322f2793ef7e8c240928b36ca93</citedby><cites>FETCH-LOGICAL-c370t-19b8e0a6b9a7686878cb835360c2cee39aee1d322f2793ef7e8c240928b36ca93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0925838805016877$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17920826$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lima, S.A.M.</creatorcontrib><creatorcontrib>Davolos, M.R.</creatorcontrib><creatorcontrib>Legnani, C.</creatorcontrib><creatorcontrib>Quirino, W.G.</creatorcontrib><creatorcontrib>Cremona, M.</creatorcontrib><title>Low voltage electroluminescence of terbium- and thulium-doped zinc oxide films</title><title>Journal of alloys and compounds</title><description>Strong interest in developing technology for visual information stimulates research for thin film electroluminescent devices. Here, for the first time, we report that thulium- and terbium-doped zinc oxide films are suitable for electroluminescence applications. Two different devices were assembled as ITO/LiF/ZnO:RE/LiF/Al or ITO/SiO
2/ZnO:RE/SiO
2/Al, where ZnO:RE is a film of zinc oxide containing 10
at% of Tb
3+ or Tm
3+. Electroluminescence spectra show that besides a broad emission band with maximum around 650
nm assigned to ZnO, also emission lines from Tb
3+ at 484
nm (
5D
4
→
7F
6), 543
nm (
5D
4
→
7F
5), and 589
nm (
5D
4
→
7F
4), or from Tm
3+ at 478
nm (
1G
4
→
3H
6), and 511
nm (
1D
2
→
3H
5) were detected. Intensity of emission as function of applied voltage and current–voltage characteristic are shown and discussed.</description><subject>Chemical synthesis</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronical transport</subject><subject>Exact sciences and technology</subject><subject>Luminescence</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Other semiconductors</subject><subject>Physics</subject><subject>Semiconductors</subject><subject>Thin films</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqFkMtOwzAQRS0EEqXwCUjewC7Bj8axVwhVvKQKNrC2HGcCrpy42El5fD2JWoklq9Fc3Zk7cxA6pySnhIqrdb423tvQ5oyQYtRyIsQBmlFZ8mwhhDpEM6JYkUku5TE6SWlNCKGK0xl6WoVPvA2-N2-AwYPtY_BD6zpIFjoLODS4h1i5oc2w6Wrcvw9-auqwgRr_uM7i8OVqwI3zbTpFR43xCc72dY5e725flg_Z6vn-cXmzyiwvSZ9RVUkgRlTKlEIKWUpbSV5wQSyzAFwZAFpzxhpWKg5NCdKyxfiDrLiwRvE5utzt3cTwMUDqdevGg703HYQhaaYWTBYLORqLndHGkFKERm-ia0381pToiZ5e6z09PdGb5JHeOHexDzDJGt9E01mX_oZLxYhkk-9654Px262DqJN1E7jaxRGmroP7J-kXFJGItA</recordid><startdate>20060720</startdate><enddate>20060720</enddate><creator>Lima, S.A.M.</creator><creator>Davolos, M.R.</creator><creator>Legnani, C.</creator><creator>Quirino, W.G.</creator><creator>Cremona, M.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20060720</creationdate><title>Low voltage electroluminescence of terbium- and thulium-doped zinc oxide films</title><author>Lima, S.A.M. ; Davolos, M.R. ; Legnani, C. ; Quirino, W.G. ; Cremona, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c370t-19b8e0a6b9a7686878cb835360c2cee39aee1d322f2793ef7e8c240928b36ca93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Chemical synthesis</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronical transport</topic><topic>Exact sciences and technology</topic><topic>Luminescence</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Other semiconductors</topic><topic>Physics</topic><topic>Semiconductors</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lima, S.A.M.</creatorcontrib><creatorcontrib>Davolos, M.R.</creatorcontrib><creatorcontrib>Legnani, C.</creatorcontrib><creatorcontrib>Quirino, W.G.</creatorcontrib><creatorcontrib>Cremona, M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lima, S.A.M.</au><au>Davolos, M.R.</au><au>Legnani, C.</au><au>Quirino, W.G.</au><au>Cremona, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low voltage electroluminescence of terbium- and thulium-doped zinc oxide films</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2006-07-20</date><risdate>2006</risdate><volume>418</volume><issue>1</issue><spage>35</spage><epage>38</epage><pages>35-38</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>Strong interest in developing technology for visual information stimulates research for thin film electroluminescent devices. Here, for the first time, we report that thulium- and terbium-doped zinc oxide films are suitable for electroluminescence applications. Two different devices were assembled as ITO/LiF/ZnO:RE/LiF/Al or ITO/SiO
2/ZnO:RE/SiO
2/Al, where ZnO:RE is a film of zinc oxide containing 10
at% of Tb
3+ or Tm
3+. Electroluminescence spectra show that besides a broad emission band with maximum around 650
nm assigned to ZnO, also emission lines from Tb
3+ at 484
nm (
5D
4
→
7F
6), 543
nm (
5D
4
→
7F
5), and 589
nm (
5D
4
→
7F
4), or from Tm
3+ at 478
nm (
1G
4
→
3H
6), and 511
nm (
1D
2
→
3H
5) were detected. Intensity of emission as function of applied voltage and current–voltage characteristic are shown and discussed.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2005.10.066</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Chemical synthesis Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronical transport Exact sciences and technology Luminescence Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Other semiconductors Physics Semiconductors Thin films |
| title | Low voltage electroluminescence of terbium- and thulium-doped zinc oxide films |
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