Analysis of photocurrent in the i-layer of GaAs-based n–i–p solar cell

A numerical investigation of the intrinsic layer effect on the improvement of GaAs n–i–p solar cell performances is presented. Solution of Poisson's equation together with continuity equations for electrons and holes allows the determination of carrier's density, electric field and recombi...

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Veröffentlicht in:	Solar energy materials and solar cells 2006-07, Vol.90 (12), p.1721-1733
Hauptverfasser:	Belghachi, Abderrahmane, Helmaoui, Abderrachid
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Energy Exact sciences and technology Natural energy Photocurrent Photovoltaic conversion p–i–n structure Recombination Solar cell Solar cells. Photoelectrochemical cells Solar energy
Online-Zugang:	Volltext
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