Analysis of photocurrent in the i-layer of GaAs-based n–i–p solar cell
A numerical investigation of the intrinsic layer effect on the improvement of GaAs n–i–p solar cell performances is presented. Solution of Poisson's equation together with continuity equations for electrons and holes allows the determination of carrier's density, electric field and recombi...
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| Veröffentlicht in: | Solar energy materials and solar cells 2006-07, Vol.90 (12), p.1721-1733 |
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| creator | Belghachi, Abderrahmane Helmaoui, Abderrachid |
| description | A numerical investigation of the intrinsic layer effect on the improvement of GaAs n–i–p solar cell performances is presented. Solution of Poisson's equation together with continuity equations for electrons and holes allows the determination of carrier's density, electric field and recombination profiles within the i-layer. The analysis examines the effect of i-layer thickness on the electric field, recombination rate and collection efficiency. It is found that increasing the i-layer thickness increases the absorption while it reduces the electric field and increases the recombination rate. The three competing parameters have to be monitored simultaneously so as to obtain an optimal thickness. To achieve this, the variation of the total photocurrent is used as indicator. The photocurrent shows a sharp increase in the domain of very thin i-layers (1
μm), the simulation is performed for thicknesses up to 2
μm. |
| doi_str_mv | 10.1016/j.solmat.2005.09.008 |
| format | Article |
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μm) then a saturation is reached for thicker layers (>1
μm), the simulation is performed for thicknesses up to 2
μm.</description><subject>Applied sciences</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Natural energy</subject><subject>Photocurrent</subject><subject>Photovoltaic conversion</subject><subject>p–i–n structure</subject><subject>Recombination</subject><subject>Solar cell</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp9UE1PwzAMjRBIjME_4NAL3FqcpM3HBWmaYIAmcYFzlKWulqlrR9Ih7cZ_4B_yS2jVSdw4WJbt9-znR8g1hYwCFXebLLb11nYZAygy0BmAOiETqqROOdfqlExAM5kCy9U5uYhxAwBM8HxCXmaNrQ_Rx6Stkt267Vq3DwGbLvFN0q0x8WltDxiG8cLOYrqyEcuk-fn69n3skv6yDYnDur4kZ5WtI14d85S8Pz68zZ_S5evieT5bpi4H1aW2cLp0q77QqDWrKihELpBSwZUoc4oKHGfcCb7qO7KgClQurBQFlE5Sxqfkdty7C-3HHmNntj4OAmyD7T4apnNWSKZ6YD4CXWhjDFiZXfBbGw6GghmMMxszGmcG4wxo0xvX026O-210tq6CbZyPf1wpC16oQcf9iMP-2U-PwUTnsXFY-oCuM2Xr_z_0C9YRhds</recordid><startdate>20060724</startdate><enddate>20060724</enddate><creator>Belghachi, Abderrahmane</creator><creator>Helmaoui, Abderrachid</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20060724</creationdate><title>Analysis of photocurrent in the i-layer of GaAs-based n–i–p solar cell</title><author>Belghachi, Abderrahmane ; Helmaoui, Abderrachid</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c408t-a5c9dcbc409e992ff05646e116386d41e80c323c63b63875180846a7650dc7123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Applied sciences</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Natural energy</topic><topic>Photocurrent</topic><topic>Photovoltaic conversion</topic><topic>p–i–n structure</topic><topic>Recombination</topic><topic>Solar cell</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Belghachi, Abderrahmane</creatorcontrib><creatorcontrib>Helmaoui, Abderrachid</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Belghachi, Abderrahmane</au><au>Helmaoui, Abderrachid</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of photocurrent in the i-layer of GaAs-based n–i–p solar cell</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2006-07-24</date><risdate>2006</risdate><volume>90</volume><issue>12</issue><spage>1721</spage><epage>1733</epage><pages>1721-1733</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>A numerical investigation of the intrinsic layer effect on the improvement of GaAs n–i–p solar cell performances is presented. Solution of Poisson's equation together with continuity equations for electrons and holes allows the determination of carrier's density, electric field and recombination profiles within the i-layer. The analysis examines the effect of i-layer thickness on the electric field, recombination rate and collection efficiency. It is found that increasing the i-layer thickness increases the absorption while it reduces the electric field and increases the recombination rate. The three competing parameters have to be monitored simultaneously so as to obtain an optimal thickness. To achieve this, the variation of the total photocurrent is used as indicator. The photocurrent shows a sharp increase in the domain of very thin i-layers (<0.5
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Energy Exact sciences and technology Natural energy Photocurrent Photovoltaic conversion p–i–n structure Recombination Solar cell Solar cells. Photoelectrochemical cells Solar energy |
| title | Analysis of photocurrent in the i-layer of GaAs-based n–i–p solar cell |
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