Parametric study on non-vacuum chemical vapor deposition of CuInS2 from a single-source precursor

Copper indium disulfide (CuInS2) films were deposited by aerosol-assisted chemical vapor deposition (AACVD) from a single-source precursor (SSP), (PPh3)2Cu(SEt)2In(SEt)2. Various deposition parameters were explored to understand how they affect the crystallography, stoichiometry, and morphology of the deposited films and the quality of fabricated solar cells. Parameters explored included the deposition temperature, location of substrate within CVD reactor, precursor concentration in toluene carrier solvent, and post-deposition annealing in a S-rich atmosphere. CuInS2films have been fabricated into complete solar cells with the top-down composition of Al/ZnO:F/CdS/CuInS2/Mo/glass and the efficiency of 1.0% under simulated AMO illumination.