Nd:YAG pulsed laser deposition of AlVO4 thin films on alumina and monocrystalline MgO

Nd:YAG pulsed laser deposition of AlVO4 thin films on alumina and monocrystalline MgO

AlVO4 thin films were prepared by infrared Nd:YAG pulsed laser deposition on two different substrates (polycrystalline Al2O3 and monocrystalline MgO). The distance between the target-substrate (30 mm) and the partial oxygen pressure (0.14 mbar) during the deposition process were chosen taking into a...

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Veröffentlicht in:Materials letters 2005-10, Vol.59 (24-25), p.3027-3032
Hauptverfasser: Castro-Rodríguez, R., Peña, J.L., Arés, O., Leccabue, F., Watts, B.E., Melioli, E.
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container_end_page 3032
container_issue 24-25
container_start_page 3027
container_title Materials letters
container_volume 59
creator Castro-Rodríguez, R.
Peña, J.L.
Arés, O.
Leccabue, F.
Watts, B.E.
Melioli, E.
description AlVO4 thin films were prepared by infrared Nd:YAG pulsed laser deposition on two different substrates (polycrystalline Al2O3 and monocrystalline MgO). The distance between the target-substrate (30 mm) and the partial oxygen pressure (0.14 mbar) during the deposition process were chosen taking into account the previous experiences with other oxides. The substrate temperature was varied between 300 and 600 °C finding an optimum at about 400 °C. At higher temperatures, the vanadium seems to evaporate from substrate surface with a strong change of stoichiometry. Preferential growth of AlVO4 films in the direction (022), were grown on MgO substrates. A very high sensitivity of these films to a flux of NO2 gas is also shown.
doi_str_mv 10.1016/j.matlet.2005.05.012
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title Nd:YAG pulsed laser deposition of AlVO4 thin films on alumina and monocrystalline MgO
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