An MOCVD Approach to High-k Praseodymium-Based Films

New high‐k dielectric thin films have become of increasing interest over the last few years in the search for an alternative material to SiO2 gate insulators in MOS devices. Lanthanide oxides have been studied as potential candidates for SiO2 replacement. In this review, a description of the differe...

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Veröffentlicht in:	Chemical vapor deposition 2006-03, Vol.12 (2-3), p.109-124
Hauptverfasser:	Lo Nigro, R., Malandrino, G., Toro, R. G., Fragalà, I. L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Dielectrics Metal-organic CVD Praseodymium
Online-Zugang:	Volltext
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