Photochemical Construction of Photovoltaic Device Composed of p-Copper(I) Oxide and n-Zinc Oxide

Photochemical Construction of Photovoltaic Device Composed of p-Copper(I) Oxide and n-Zinc Oxide

The photochemical deposition of a p-type semiconducting copper(I) oxide (Cu2O) layer by irradiating visible light in an aqueous solution containing a lactic acid and copper sulfate hydrate is presented. The p-Cu2O layer was photochemically stacked on a chemically deposited n-type semiconducting ZnO...

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Veröffentlicht in:Journal of the Electrochemical Society 2006-01, Vol.153 (9), p.C668-C672
Hauptverfasser: Izaki, Masanobu, Mizuno, Ko-Taro, Shinagawa, Tsutomu, Inaba, Minoru, Tasaka, Akimasa
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container_end_page C672
container_issue 9
container_start_page C668
container_title Journal of the Electrochemical Society
container_volume 153
creator Izaki, Masanobu
Mizuno, Ko-Taro
Shinagawa, Tsutomu
Inaba, Minoru
Tasaka, Akimasa
description The photochemical deposition of a p-type semiconducting copper(I) oxide (Cu2O) layer by irradiating visible light in an aqueous solution containing a lactic acid and copper sulfate hydrate is presented. The p-Cu2O layer was photochemically stacked on a chemically deposited n-type semiconducting ZnO layer/quartz glass substrate, and the photovoltaic device was constructed by forming a Au top electrode using a sputtering technique. The Au/p-Cu2O/n-ZnO photovoltaic device showed an electrical rectification and the performance of 46 mV in open-circuit voltage (V(oc)) and 75 muA cm-2 in short-circuit current density (J(sc)) under an Air Mass 1.5 illumination.
doi_str_mv 10.1149/1.2218791
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title Photochemical Construction of Photovoltaic Device Composed of p-Copper(I) Oxide and n-Zinc Oxide
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