Incorporation of Si in a-C:Si:H films monitored by infrared excited Raman scattering
Silicon-containing diamond-like amorphous carbon layers with varying Si content were prepared from methane and tetramethylsilane gas mixture by plasma enhanced CVD. The bonding configuration of the samples was examined by XPS and Raman spectroscopy. By the decomposition of scattering spectra excited...
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| Veröffentlicht in: | Diamond and related materials 2006-04, Vol.15 (4), p.932-935 |
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| container_title | Diamond and related materials |
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| creator | Veres, M. Koós, M. Orsós, N. Tóth, S. Füle, M. Mohai, M. Bertóti, I. |
| description | Silicon-containing diamond-like amorphous carbon layers with varying Si content were prepared from methane and tetramethylsilane gas mixture by plasma enhanced CVD. The bonding configuration of the samples was examined by XPS and Raman spectroscopy. By the decomposition of scattering spectra excited by the 488 nm line of an Ar ion laser, it was found that, besides the well-known shift of the G peak to lower wavenumbers with increasing Si content, there is still a contribution to the scattered intensity in the 1550–1600 cm
−
1
region even in the spectrum of sample with highest Si content studied. By using near-infrared (785 nm) laser for the Raman probe, we prove the presence of a distinguishable band in the G peak region. Our Raman results show the preservation of sp
2 clusters without any Si incorporation in a-C:Si:H films. |
| doi_str_mv | 10.1016/j.diamond.2005.10.051 |
| format | Article |
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−
1
region even in the spectrum of sample with highest Si content studied. By using near-infrared (785 nm) laser for the Raman probe, we prove the presence of a distinguishable band in the G peak region. Our Raman results show the preservation of sp
2 clusters without any Si incorporation in a-C:Si:H films.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2005.10.051</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Bonding configurations ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Composition and phase identification ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Diamond-like carbon ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Microstructure ; Physics ; Raman spectroscopy ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Diamond and related materials, 2006-04, Vol.15 (4), p.932-935</ispartof><rights>2005 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c401t-6ae4a4f8d01050afce9b852ea7379a4c67f20990be78240a6387ea7c4ecdc21c3</citedby><cites>FETCH-LOGICAL-c401t-6ae4a4f8d01050afce9b852ea7379a4c67f20990be78240a6387ea7c4ecdc21c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.diamond.2005.10.051$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17954544$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Veres, M.</creatorcontrib><creatorcontrib>Koós, M.</creatorcontrib><creatorcontrib>Orsós, N.</creatorcontrib><creatorcontrib>Tóth, S.</creatorcontrib><creatorcontrib>Füle, M.</creatorcontrib><creatorcontrib>Mohai, M.</creatorcontrib><creatorcontrib>Bertóti, I.</creatorcontrib><title>Incorporation of Si in a-C:Si:H films monitored by infrared excited Raman scattering</title><title>Diamond and related materials</title><description>Silicon-containing diamond-like amorphous carbon layers with varying Si content were prepared from methane and tetramethylsilane gas mixture by plasma enhanced CVD. The bonding configuration of the samples was examined by XPS and Raman spectroscopy. By the decomposition of scattering spectra excited by the 488 nm line of an Ar ion laser, it was found that, besides the well-known shift of the G peak to lower wavenumbers with increasing Si content, there is still a contribution to the scattered intensity in the 1550–1600 cm
−
1
region even in the spectrum of sample with highest Si content studied. By using near-infrared (785 nm) laser for the Raman probe, we prove the presence of a distinguishable band in the G peak region. Our Raman results show the preservation of sp
2 clusters without any Si incorporation in a-C:Si:H films.</description><subject>Bonding configurations</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Composition and phase identification</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Diamond-like carbon</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Microstructure</subject><subject>Physics</subject><subject>Raman spectroscopy</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0925-9635</issn><issn>1879-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqNkFFr2zAQx8VoYWm6jzDwS_dm96RIttWXMULXBgKDtXsWF_k8FGwplZyxfvvJJNDH7uXuuPvf_7gfY585VBx4fbuvOodj8F0lAFTuVaD4B7bgbaNLgFpcsAVooUpdr9RHdpXSHoALLfmCPW-8DfEQIk4u-CL0xZMrnC-wXN89ubvHonfDmIrs7qYQqSt2r3ncR5xr-mvdlPNPHNEXyeI0UXT-9zW77HFI9Omcl-zX9_vn9WO5_fGwWX_bllYCn8oaSaLs2w44KMDekt61ShA2q0ajtHXTC9AadtS0QgLWq7bJQyvJdlZwu1qyLyffQwwvR0qTGV2yNAzoKRyTmV9UAur_EUKbQxaqk9DGkFKk3hyiGzG-Gg5mhm325gzbzLDndoad927OBzBjGDIfb116W260kkrO_l9POspY_jiKJllH3lLnItnJdMG9c-kfpMCXVg</recordid><startdate>20060401</startdate><enddate>20060401</enddate><creator>Veres, M.</creator><creator>Koós, M.</creator><creator>Orsós, N.</creator><creator>Tóth, S.</creator><creator>Füle, M.</creator><creator>Mohai, M.</creator><creator>Bertóti, I.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7TB</scope><scope>FR3</scope></search><sort><creationdate>20060401</creationdate><title>Incorporation of Si in a-C:Si:H films monitored by infrared excited Raman scattering</title><author>Veres, M. ; Koós, M. ; Orsós, N. ; Tóth, S. ; Füle, M. ; Mohai, M. ; Bertóti, I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c401t-6ae4a4f8d01050afce9b852ea7379a4c67f20990be78240a6387ea7c4ecdc21c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Bonding configurations</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Composition and phase identification</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Diamond-like carbon</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Microstructure</topic><topic>Physics</topic><topic>Raman spectroscopy</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Veres, M.</creatorcontrib><creatorcontrib>Koós, M.</creatorcontrib><creatorcontrib>Orsós, N.</creatorcontrib><creatorcontrib>Tóth, S.</creatorcontrib><creatorcontrib>Füle, M.</creatorcontrib><creatorcontrib>Mohai, M.</creatorcontrib><creatorcontrib>Bertóti, I.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><jtitle>Diamond and related materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Veres, M.</au><au>Koós, M.</au><au>Orsós, N.</au><au>Tóth, S.</au><au>Füle, M.</au><au>Mohai, M.</au><au>Bertóti, I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Incorporation of Si in a-C:Si:H films monitored by infrared excited Raman scattering</atitle><jtitle>Diamond and related materials</jtitle><date>2006-04-01</date><risdate>2006</risdate><volume>15</volume><issue>4</issue><spage>932</spage><epage>935</epage><pages>932-935</pages><issn>0925-9635</issn><eissn>1879-0062</eissn><abstract>Silicon-containing diamond-like amorphous carbon layers with varying Si content were prepared from methane and tetramethylsilane gas mixture by plasma enhanced CVD. The bonding configuration of the samples was examined by XPS and Raman spectroscopy. By the decomposition of scattering spectra excited by the 488 nm line of an Ar ion laser, it was found that, besides the well-known shift of the G peak to lower wavenumbers with increasing Si content, there is still a contribution to the scattered intensity in the 1550–1600 cm
−
1
region even in the spectrum of sample with highest Si content studied. By using near-infrared (785 nm) laser for the Raman probe, we prove the presence of a distinguishable band in the G peak region. Our Raman results show the preservation of sp
2 clusters without any Si incorporation in a-C:Si:H films.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.diamond.2005.10.051</doi><tpages>4</tpages></addata></record> |
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| subjects | Bonding configurations Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Composition and phase identification Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Diamond-like carbon Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Microstructure Physics Raman spectroscopy Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Incorporation of Si in a-C:Si:H films monitored by infrared excited Raman scattering |
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