Liquid Clean Formulations for Stripping High-Dose Ion-Implanted Photoresist from Microelectronic Devices

Liquid clean formulations comprised of an organosilane, Et3N, and toluene have been found to selectively strip thin films of high-dose arsenic-implanted polyhydroxystyrene photoresist and hardened carbonized crust without silicon/oxide loss. During the cleaning process, self-assembled monolayers (SA...

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Veröffentlicht in:	Journal of the Electrochemical Society 2006-01, Vol.153 (7), p.G591-G597
Hauptverfasser:	Visintin, Pamela M., Korzenski, Michael B., Baum, Thomas H.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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