MOCVD and ALD of High-k Dielectric Oxides Using Alkoxide Precursors

A number of high‐permittivity (κ) dielectric oxides are currently being investigated as alternatives to SiO2 as the dielectric insulating layer in sub‐0.1 μm CMOS technology. Metal‐organic (MO)CVD and atomic layer deposition (ALD) are promising techniques for the deposition of these high‐κ dielectri...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Chemical vapor deposition 2006-03, Vol.12 (2-3), p.83-98
Hauptverfasser:	Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Manning, T. D., Loo, Y. F., O'Kane, R., Gaskell, J. M., Smith, L. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Hafnium oxides Lanthanum oxides Precursors Zirconium oxide
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!