Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers

Systematic investigations were performed on a set of AlInGaN epilayers which were grown on sapphire substrate by metal organic chemical vapor deposition (MOCVD) at growth rates ranging from 3.2 to 18.0 nm/min. Rutherford backscattering and channeling were used to determine the composition and to eva...

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Veröffentlicht in:	Journal of crystal growth 2007, Vol.298, p.341-344
Hauptverfasser:	Pan, Yaobo, Yu, Tongjun, Yang, Zhijian, Wang, Huan, Qin, Zhixin, Hu, Xiaodong, Wang, Kun, Yao, Shude, Zhang, Guoyi
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Atomic force micrograph A1. Rutherford backscattering spectroscopy A3. Metalorganic chemical vapor deposition B1. AlInGaN Quaternary alloys Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Single-crystal and powder diffraction Structure of solids and liquids crystallography Theory and models of film growth X-ray diffraction and scattering
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