Improvement of SiO2 pattern profiles etched in CF4 and SF6 plasmas by using a Faraday cage and neutral beams

This study reports on a new plasma etching technique, using a Faraday cage and neutral beams, that improves the etch profile of an SiO2 trench in CF4 and SF6 plasmas. A Faraday cage, with a top plane made of conductive grids, was placed on the cathode of a transformercoupled plasma etcher such that...

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Veröffentlicht in:	Surface & coatings technology 2005-04, Vol.193 (1-3), p.75-80
Hauptverfasser:	Min, Jae-Ho, Lee, Gyeo-Re, Lee, Jin-Kwan, Kim, Chang-Koo, Moon, Sang Heup
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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