Implementing the electron backscattering factor in quantitative sputter depth profiling using AES

Sputter depth profiling using Auger electron spectroscopy (AES) is influenced by the electron backscattering contribution to the AES intensity. When approaching an interface between two components having a different backscattering factor, the shape of the profile is characteristically distorted. Thi...

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Veröffentlicht in:	Surface and interface analysis 2007-04, Vol.39 (4), p.324-330
Hauptverfasser:	Hofmann, Siegfried, Wang, Jiang Yong
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical composition analysis, chemical depth and dopant profiling Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electron and ion emission by liquids and solids impact phenomena electron backscattering Exact sciences and technology Impact phenomena (including electron spectra and sputtering) Materials science Materials testing MRI model Physics sputter depth profiling
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