Implementing the electron backscattering factor in quantitative sputter depth profiling using AES
Sputter depth profiling using Auger electron spectroscopy (AES) is influenced by the electron backscattering contribution to the AES intensity. When approaching an interface between two components having a different backscattering factor, the shape of the profile is characteristically distorted. Thi...
Gespeichert in:
| Veröffentlicht in: | Surface and interface analysis 2007-04, Vol.39 (4), p.324-330 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 330 |
|---|---|
| container_issue | 4 |
| container_start_page | 324 |
| container_title | Surface and interface analysis |
| container_volume | 39 |
| creator | Hofmann, Siegfried Wang, Jiang Yong |
| description | Sputter depth profiling using Auger electron spectroscopy (AES) is influenced by the electron backscattering contribution to the AES intensity. When approaching an interface between two components having a different backscattering factor, the shape of the profile is characteristically distorted. This distortion is taken into account in a modified version of the mixing‐roughness‐information depth (MRI) model. The modification is based on the simplified assumption that the influence of the backscattering effect of the component below the interface increases exponentially with decreasing distance of the actual surface to the interface. Application of the modified MRI model is shown to yield excellent results of profile calculation for AES depth profiling of Si/W, C/Ta, C/Ti, and Au/TiO2 interfaces, with backscattering factor ratios close to those predicted by the Ichimura–Shimizu relation. A simple correction of the backscattering influence is proposed and discussed. Copyright © 2006 John Wiley & Sons, Ltd. |
| doi_str_mv | 10.1002/sia.2503 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29397354</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29397354</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4643-60905cc8bcfd478bf9ecd3629d960cb0371dcb2874e75695f102c658c40d64933</originalsourceid><addsrcrecordid>eNp10MtKxDAYhuEgCo4H8BK6UdxUc2qaLEcZdcATjOIypOlfjXbamqQe7t6WGXTlJlnk4SV8CB0QfEIwpqfBmROaYbaBJgQrkSpF5CaaYMJpSjkl22gnhFeMsWRSTJCZL7saltBE1zwn8QUSqMFG3zZJYexbsCZG8ONbZWxsfeKa5L03A48mug9IQtePIimhiy9J59vK1SPvw3hOZ4s9tFWZOsD--t5Fjxezh_Or9Prucn4-vU4tF5ylAiucWSsLW5U8l0WlwJZMUFUqgW2BWU5KW1CZc8gzobKKYGpFJi3HpeCKsV10tOoOf3jvIUS9dMFCXZsG2j5oqpjKWcYHeLyC1rcheKh0593S-G9NsB431MOGetxwoIfrphmWqCtvGuvCn5eCMUnHZLpyn66G7397ejGfrrtr70KEr19v_JsWOcsz_XR7qcX92cUivznT9-wHxFOPvA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29397354</pqid></control><display><type>article</type><title>Implementing the electron backscattering factor in quantitative sputter depth profiling using AES</title><source>Wiley Online Library All Journals</source><creator>Hofmann, Siegfried ; Wang, Jiang Yong</creator><creatorcontrib>Hofmann, Siegfried ; Wang, Jiang Yong</creatorcontrib><description>Sputter depth profiling using Auger electron spectroscopy (AES) is influenced by the electron backscattering contribution to the AES intensity. When approaching an interface between two components having a different backscattering factor, the shape of the profile is characteristically distorted. This distortion is taken into account in a modified version of the mixing‐roughness‐information depth (MRI) model. The modification is based on the simplified assumption that the influence of the backscattering effect of the component below the interface increases exponentially with decreasing distance of the actual surface to the interface. Application of the modified MRI model is shown to yield excellent results of profile calculation for AES depth profiling of Si/W, C/Ta, C/Ti, and Au/TiO2 interfaces, with backscattering factor ratios close to those predicted by the Ichimura–Shimizu relation. A simple correction of the backscattering influence is proposed and discussed. Copyright © 2006 John Wiley & Sons, Ltd.</description><identifier>ISSN: 0142-2421</identifier><identifier>EISSN: 1096-9918</identifier><identifier>DOI: 10.1002/sia.2503</identifier><identifier>CODEN: SIANDQ</identifier><language>eng</language><publisher>Chichester, UK: John Wiley & Sons, Ltd</publisher><subject>Chemical composition analysis, chemical depth and dopant profiling ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Electron and ion emission by liquids and solids; impact phenomena ; electron backscattering ; Exact sciences and technology ; Impact phenomena (including electron spectra and sputtering) ; Materials science ; Materials testing ; MRI model ; Physics ; sputter depth profiling</subject><ispartof>Surface and interface analysis, 2007-04, Vol.39 (4), p.324-330</ispartof><rights>Copyright © 2006 John Wiley & Sons, Ltd.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4643-60905cc8bcfd478bf9ecd3629d960cb0371dcb2874e75695f102c658c40d64933</citedby><cites>FETCH-LOGICAL-c4643-60905cc8bcfd478bf9ecd3629d960cb0371dcb2874e75695f102c658c40d64933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsia.2503$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsia.2503$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27923,27924,45573,45574</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18633824$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hofmann, Siegfried</creatorcontrib><creatorcontrib>Wang, Jiang Yong</creatorcontrib><title>Implementing the electron backscattering factor in quantitative sputter depth profiling using AES</title><title>Surface and interface analysis</title><addtitle>Surf. Interface Anal</addtitle><description>Sputter depth profiling using Auger electron spectroscopy (AES) is influenced by the electron backscattering contribution to the AES intensity. When approaching an interface between two components having a different backscattering factor, the shape of the profile is characteristically distorted. This distortion is taken into account in a modified version of the mixing‐roughness‐information depth (MRI) model. The modification is based on the simplified assumption that the influence of the backscattering effect of the component below the interface increases exponentially with decreasing distance of the actual surface to the interface. Application of the modified MRI model is shown to yield excellent results of profile calculation for AES depth profiling of Si/W, C/Ta, C/Ti, and Au/TiO2 interfaces, with backscattering factor ratios close to those predicted by the Ichimura–Shimizu relation. A simple correction of the backscattering influence is proposed and discussed. Copyright © 2006 John Wiley & Sons, Ltd.</description><subject>Chemical composition analysis, chemical depth and dopant profiling</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electron and ion emission by liquids and solids; impact phenomena</subject><subject>electron backscattering</subject><subject>Exact sciences and technology</subject><subject>Impact phenomena (including electron spectra and sputtering)</subject><subject>Materials science</subject><subject>Materials testing</subject><subject>MRI model</subject><subject>Physics</subject><subject>sputter depth profiling</subject><issn>0142-2421</issn><issn>1096-9918</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp10MtKxDAYhuEgCo4H8BK6UdxUc2qaLEcZdcATjOIypOlfjXbamqQe7t6WGXTlJlnk4SV8CB0QfEIwpqfBmROaYbaBJgQrkSpF5CaaYMJpSjkl22gnhFeMsWRSTJCZL7saltBE1zwn8QUSqMFG3zZJYexbsCZG8ONbZWxsfeKa5L03A48mug9IQtePIimhiy9J59vK1SPvw3hOZ4s9tFWZOsD--t5Fjxezh_Or9Prucn4-vU4tF5ylAiucWSsLW5U8l0WlwJZMUFUqgW2BWU5KW1CZc8gzobKKYGpFJi3HpeCKsV10tOoOf3jvIUS9dMFCXZsG2j5oqpjKWcYHeLyC1rcheKh0593S-G9NsB431MOGetxwoIfrphmWqCtvGuvCn5eCMUnHZLpyn66G7397ejGfrrtr70KEr19v_JsWOcsz_XR7qcX92cUivznT9-wHxFOPvA</recordid><startdate>200704</startdate><enddate>200704</enddate><creator>Hofmann, Siegfried</creator><creator>Wang, Jiang Yong</creator><general>John Wiley & Sons, Ltd</general><general>Wiley</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200704</creationdate><title>Implementing the electron backscattering factor in quantitative sputter depth profiling using AES</title><author>Hofmann, Siegfried ; Wang, Jiang Yong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4643-60905cc8bcfd478bf9ecd3629d960cb0371dcb2874e75695f102c658c40d64933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Chemical composition analysis, chemical depth and dopant profiling</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electron and ion emission by liquids and solids; impact phenomena</topic><topic>electron backscattering</topic><topic>Exact sciences and technology</topic><topic>Impact phenomena (including electron spectra and sputtering)</topic><topic>Materials science</topic><topic>Materials testing</topic><topic>MRI model</topic><topic>Physics</topic><topic>sputter depth profiling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hofmann, Siegfried</creatorcontrib><creatorcontrib>Wang, Jiang Yong</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Surface and interface analysis</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hofmann, Siegfried</au><au>Wang, Jiang Yong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Implementing the electron backscattering factor in quantitative sputter depth profiling using AES</atitle><jtitle>Surface and interface analysis</jtitle><addtitle>Surf. Interface Anal</addtitle><date>2007-04</date><risdate>2007</risdate><volume>39</volume><issue>4</issue><spage>324</spage><epage>330</epage><pages>324-330</pages><issn>0142-2421</issn><eissn>1096-9918</eissn><coden>SIANDQ</coden><abstract>Sputter depth profiling using Auger electron spectroscopy (AES) is influenced by the electron backscattering contribution to the AES intensity. When approaching an interface between two components having a different backscattering factor, the shape of the profile is characteristically distorted. This distortion is taken into account in a modified version of the mixing‐roughness‐information depth (MRI) model. The modification is based on the simplified assumption that the influence of the backscattering effect of the component below the interface increases exponentially with decreasing distance of the actual surface to the interface. Application of the modified MRI model is shown to yield excellent results of profile calculation for AES depth profiling of Si/W, C/Ta, C/Ti, and Au/TiO2 interfaces, with backscattering factor ratios close to those predicted by the Ichimura–Shimizu relation. A simple correction of the backscattering influence is proposed and discussed. Copyright © 2006 John Wiley & Sons, Ltd.</abstract><cop>Chichester, UK</cop><pub>John Wiley & Sons, Ltd</pub><doi>10.1002/sia.2503</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0142-2421 |
| ispartof | Surface and interface analysis, 2007-04, Vol.39 (4), p.324-330 |
| issn | 0142-2421 1096-9918 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29397354 |
| source | Wiley Online Library All Journals |
| subjects | Chemical composition analysis, chemical depth and dopant profiling Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electron and ion emission by liquids and solids impact phenomena electron backscattering Exact sciences and technology Impact phenomena (including electron spectra and sputtering) Materials science Materials testing MRI model Physics sputter depth profiling |
| title | Implementing the electron backscattering factor in quantitative sputter depth profiling using AES |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T09%3A51%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Implementing%20the%20electron%20backscattering%20factor%20in%20quantitative%20sputter%20depth%20profiling%20using%20AES&rft.jtitle=Surface%20and%20interface%20analysis&rft.au=Hofmann,%20Siegfried&rft.date=2007-04&rft.volume=39&rft.issue=4&rft.spage=324&rft.epage=330&rft.pages=324-330&rft.issn=0142-2421&rft.eissn=1096-9918&rft.coden=SIANDQ&rft_id=info:doi/10.1002/sia.2503&rft_dat=%3Cproquest_cross%3E29397354%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29397354&rft_id=info:pmid/&rfr_iscdi=true |