Influence of the ex-situ and in-situ annealed self-buffer layer on ZnO film
Two self‐buffer layers were grown on c‐plane sapphire substrates by atmospheric MOCVD method using DEZn, tert‐butanol as precursors and H2 as carrier gas. Then, they were respectively annealed in growth process and oxygen environment. After that, ZnO films were respectively grown on them. XRD spectr...
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| Veröffentlicht in: | Physica status solidi. C 2006-03, Vol.3 (4), p.1010-1013 |
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| creator | Wang, Jinzhong Sallet, Vincent Amiri, Gaëlle Rommelluere, Jean-François Lusson, Alain Rzepka, E. Lewis, John E. Galtier, Pierre Fortunato, Elvira Martins, Rodrigo Gorochov, Ouri |
| description | Two self‐buffer layers were grown on c‐plane sapphire substrates by atmospheric MOCVD method using DEZn, tert‐butanol as precursors and H2 as carrier gas. Then, they were respectively annealed in growth process and oxygen environment. After that, ZnO films were respectively grown on them. XRD spectra show that all the films were grown in [002] orientation. Furthermore, the film with a buffer layer annealed in oxygen exhibits much higher crystal quality. Its FWHM of the rocking curve is only 567 arcsec. Furthermore, its Raman scattering spectrum appears a much stronger E2 mode peak at 436 cm–1 and its PL spectrum appears a shoulder at 3.367 eV on the higher energy side. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.200564704 |
| format | Article |
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Then, they were respectively annealed in growth process and oxygen environment. After that, ZnO films were respectively grown on them. XRD spectra show that all the films were grown in [002] orientation. Furthermore, the film with a buffer layer annealed in oxygen exhibits much higher crystal quality. Its FWHM of the rocking curve is only 567 arcsec. Furthermore, its Raman scattering spectrum appears a much stronger E2 mode peak at 436 cm–1 and its PL spectrum appears a shoulder at 3.367 eV on the higher energy side. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>ISSN: 1610-1634</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.200564704</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>61.10.Nz ; 78.55.Et ; 81.05.Dz ; 81.15.Gh</subject><ispartof>Physica status solidi. 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C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Jinzhong</au><au>Sallet, Vincent</au><au>Amiri, Gaëlle</au><au>Rommelluere, Jean-François</au><au>Lusson, Alain</au><au>Rzepka, E.</au><au>Lewis, John E.</au><au>Galtier, Pierre</au><au>Fortunato, Elvira</au><au>Martins, Rodrigo</au><au>Gorochov, Ouri</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of the ex-situ and in-situ annealed self-buffer layer on ZnO film</atitle><jtitle>Physica status solidi. C</jtitle><addtitle>Phys. Status Solidi (c)</addtitle><date>2006-03</date><risdate>2006</risdate><volume>3</volume><issue>4</issue><spage>1010</spage><epage>1013</epage><pages>1010-1013</pages><issn>1862-6351</issn><issn>1610-1634</issn><eissn>1610-1642</eissn><abstract>Two self‐buffer layers were grown on c‐plane sapphire substrates by atmospheric MOCVD method using DEZn, tert‐butanol as precursors and H2 as carrier gas. Then, they were respectively annealed in growth process and oxygen environment. After that, ZnO films were respectively grown on them. XRD spectra show that all the films were grown in [002] orientation. Furthermore, the film with a buffer layer annealed in oxygen exhibits much higher crystal quality. Its FWHM of the rocking curve is only 567 arcsec. Furthermore, its Raman scattering spectrum appears a much stronger E2 mode peak at 436 cm–1 and its PL spectrum appears a shoulder at 3.367 eV on the higher energy side. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.200564704</doi><tpages>4</tpages></addata></record> |
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| subjects | 61.10.Nz 78.55.Et 81.05.Dz 81.15.Gh |
| title | Influence of the ex-situ and in-situ annealed self-buffer layer on ZnO film |
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