Influence of V/III flux ratio on electrical properties of AlInGaN/Gan heterostructures grown by MOCVD

The electrical properties of AlInGaN/GaN heterostructures grown on sapphire substrate by metal-organic chemical vapor deposition under different V/III flux ratios from 3880 to 9082 were investigated. Rutherford backscattering and channeling were used to determine the composition and to evaluate crys...

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Veröffentlicht in:	Journal of crystal growth 2007, Vol.298, p.211-214
Hauptverfasser:	Yu, Tongjun, Pan, Yaobo, Yang, Zhijian, Xu, Ke, Zhang, Guoyi
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Atomic force micrograph A1. Rutherford backscattering spectroscopy A3. Metal-organic chemical vapor deposition B1. AlInGaN/GaN heterostructures Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Instruments, apparatus, components and techniques common to several branches of physics and astronomy Materials science Methods of deposition of films and coatings film growth and epitaxy Other semiconductors Physics Specific materials Thermal instruments, apparatus and techniques Thermometry
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