Effect of Temperature on Novel InAlGaP∕GaAs∕InGaAs Camel-Gate Pseudomorphic High-Electron-Mobility Transistors

As an alternative to AlGaAs/GaAs and InGaP/GaAs camel-gate heterostructure field-effect transistors (CAMFETs) for microwave applications, InAlGaP/GaAs/InGaAs pseudomorphic high-electron-mobility transistors (CAM-pHEMTs) are shown to have high breakdown voltage, high broad-plateau extrinsic transconductance (gm), and small leakage current. Two-terminal gate-source breakdown voltage exceeding 20V is achieved for CAM-pHEMT with Ni/Au gate metal. The transconductance curve is quite broad for a gate voltage range of approximately 3.6V. Additionally, CAM-pHEMT exhibits relatively negligible temperature-dependent characteristics over the operating temperature range. Therefore, the studied device displays promise for high-temperature applications.