MOVPE growth investigations of doping and ordering in AlGaAs and GaInP with reflectance anisotropy spectroscopy

AlGaAs and InGaAlP are important materials for optoelectronic devices. We investigate the effect of p- and n-type doping on the reflectance anisotropy spectroscopy (RAS) spectra of these materials. Different n-dopants (Te, Si) were incorporated to investigate their contribution to the RAS signal at...

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