MOVPE growth and real structure of vertical-aligned GaAs nanowires

We studied the influence of the substrate preparation and the growth conditions important to fabricate GaAs nanowires (NWs) with metal-organic vapor phase epitaxy. The growth parameters temperature, precursor partial pressures and growth duration were investigated. The definite choice of the V/III r...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2007, Vol.298, p.625-630
Hauptverfasser:	Bauer, J., Gottschalch, V., Paetzelt, H., Wagner, G., Fuhrmann, B., Leipner, H.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Nanostructures A3. Metal-organic vapor phase epitaxy B2. Semiconducting gallium arsenide Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Nanoscale materials and structures: fabrication and characterization Other semiconductors Physics Quantum wires Specific materials Theory and models of film growth Vapor phase epitaxy growth from vapor phase
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!