MOVPE growth and real structure of vertical-aligned GaAs nanowires
We studied the influence of the substrate preparation and the growth conditions important to fabricate GaAs nanowires (NWs) with metal-organic vapor phase epitaxy. The growth parameters temperature, precursor partial pressures and growth duration were investigated. The definite choice of the V/III r...
Gespeichert in:
| Veröffentlicht in: | Journal of crystal growth 2007, Vol.298, p.625-630 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 630 |
|---|---|
| container_issue | |
| container_start_page | 625 |
| container_title | Journal of crystal growth |
| container_volume | 298 |
| creator | Bauer, J. Gottschalch, V. Paetzelt, H. Wagner, G. Fuhrmann, B. Leipner, H.S. |
| description | We studied the influence of the substrate preparation and the growth conditions important to fabricate GaAs nanowires (NWs) with metal-organic vapor phase epitaxy. The growth parameters temperature, precursor partial pressures and growth duration were investigated. The definite choice of the V/III ratio enables NW length growth independent on the diameter. By investigating the temporal evolution of the GaAs-NW growth a diameter-dependent growth rate could be determined. Applying nanosphere lithography arranged GaAs-NW arrays were achieved. The NWs morphology and real structure was investigated using (high-resolution) transmission electron microscopy and selective area diffraction. The twin formation in GaAs NWs was investigated. A crystallographic model is presented. |
| doi_str_mv | 10.1016/j.jcrysgro.2006.10.082 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29366631</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024806010797</els_id><sourcerecordid>29366631</sourcerecordid><originalsourceid>FETCH-LOGICAL-c373t-ae77e8948377714ab496a157d539ce708ec0836adfee96093e4c6431dcd0a1d3</originalsourceid><addsrcrecordid>eNqFkMFOwzAQRC0EEqXwC8gXuCXYcWI7N0pVClJROVRcLWNviqM0KXbaqn-PqxZx5LIrjWZ2NQ-hW0pSSih_qNPa-H1Y-i7NCOFRTInMztCASsGSgpDsHA3izBKS5fISXYVQExKTlAzQ09v8432CY3jXf2HdWuxBNzj0fmP6jQfcVXgLvndGN4lu3LIFi6d6FHCr227nPIRrdFHpJsDNaQ_R4nmyGL8ks_n0dTyaJYYJ1icahABZ5pIJIWiuP_OSa1oIW7DSgCASDJGMa1sBlJyUDHLDc0atsURTy4bo_nh27bvvDYRerVww0DS6hW4TVFYyzjmj0ciPRuO7EDxUau3dSvu9okQdiKla_RJTB2IHPRKLwbvTBx1i3crr1rjwl5aFkDIT0fd49EFsu3XgVTAOWgM24jC9sp3779UP_bOEwg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29366631</pqid></control><display><type>article</type><title>MOVPE growth and real structure of vertical-aligned GaAs nanowires</title><source>Access via ScienceDirect (Elsevier)</source><creator>Bauer, J. ; Gottschalch, V. ; Paetzelt, H. ; Wagner, G. ; Fuhrmann, B. ; Leipner, H.S.</creator><creatorcontrib>Bauer, J. ; Gottschalch, V. ; Paetzelt, H. ; Wagner, G. ; Fuhrmann, B. ; Leipner, H.S.</creatorcontrib><description>We studied the influence of the substrate preparation and the growth conditions important to fabricate GaAs nanowires (NWs) with metal-organic vapor phase epitaxy. The growth parameters temperature, precursor partial pressures and growth duration were investigated. The definite choice of the V/III ratio enables NW length growth independent on the diameter. By investigating the temporal evolution of the GaAs-NW growth a diameter-dependent growth rate could be determined. Applying nanosphere lithography arranged GaAs-NW arrays were achieved. The NWs morphology and real structure was investigated using (high-resolution) transmission electron microscopy and selective area diffraction. The twin formation in GaAs NWs was investigated. A crystallographic model is presented.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2006.10.082</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Nanostructures ; A3. Metal-organic vapor phase epitaxy ; B2. Semiconducting gallium arsenide ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Nanoscale materials and structures: fabrication and characterization ; Other semiconductors ; Physics ; Quantum wires ; Specific materials ; Theory and models of film growth ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Journal of crystal growth, 2007, Vol.298, p.625-630</ispartof><rights>2006 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-ae77e8948377714ab496a157d539ce708ec0836adfee96093e4c6431dcd0a1d3</citedby><cites>FETCH-LOGICAL-c373t-ae77e8948377714ab496a157d539ce708ec0836adfee96093e4c6431dcd0a1d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2006.10.082$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,4024,4050,4051,23930,23931,25140,27923,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18578827$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bauer, J.</creatorcontrib><creatorcontrib>Gottschalch, V.</creatorcontrib><creatorcontrib>Paetzelt, H.</creatorcontrib><creatorcontrib>Wagner, G.</creatorcontrib><creatorcontrib>Fuhrmann, B.</creatorcontrib><creatorcontrib>Leipner, H.S.</creatorcontrib><title>MOVPE growth and real structure of vertical-aligned GaAs nanowires</title><title>Journal of crystal growth</title><description>We studied the influence of the substrate preparation and the growth conditions important to fabricate GaAs nanowires (NWs) with metal-organic vapor phase epitaxy. The growth parameters temperature, precursor partial pressures and growth duration were investigated. The definite choice of the V/III ratio enables NW length growth independent on the diameter. By investigating the temporal evolution of the GaAs-NW growth a diameter-dependent growth rate could be determined. Applying nanosphere lithography arranged GaAs-NW arrays were achieved. The NWs morphology and real structure was investigated using (high-resolution) transmission electron microscopy and selective area diffraction. The twin formation in GaAs NWs was investigated. A crystallographic model is presented.</description><subject>A1. Nanostructures</subject><subject>A3. Metal-organic vapor phase epitaxy</subject><subject>B2. Semiconducting gallium arsenide</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Other semiconductors</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Specific materials</subject><subject>Theory and models of film growth</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkMFOwzAQRC0EEqXwC8gXuCXYcWI7N0pVClJROVRcLWNviqM0KXbaqn-PqxZx5LIrjWZ2NQ-hW0pSSih_qNPa-H1Y-i7NCOFRTInMztCASsGSgpDsHA3izBKS5fISXYVQExKTlAzQ09v8432CY3jXf2HdWuxBNzj0fmP6jQfcVXgLvndGN4lu3LIFi6d6FHCr227nPIRrdFHpJsDNaQ_R4nmyGL8ks_n0dTyaJYYJ1icahABZ5pIJIWiuP_OSa1oIW7DSgCASDJGMa1sBlJyUDHLDc0atsURTy4bo_nh27bvvDYRerVww0DS6hW4TVFYyzjmj0ciPRuO7EDxUau3dSvu9okQdiKla_RJTB2IHPRKLwbvTBx1i3crr1rjwl5aFkDIT0fd49EFsu3XgVTAOWgM24jC9sp3779UP_bOEwg</recordid><startdate>2007</startdate><enddate>2007</enddate><creator>Bauer, J.</creator><creator>Gottschalch, V.</creator><creator>Paetzelt, H.</creator><creator>Wagner, G.</creator><creator>Fuhrmann, B.</creator><creator>Leipner, H.S.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>2007</creationdate><title>MOVPE growth and real structure of vertical-aligned GaAs nanowires</title><author>Bauer, J. ; Gottschalch, V. ; Paetzelt, H. ; Wagner, G. ; Fuhrmann, B. ; Leipner, H.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-ae77e8948377714ab496a157d539ce708ec0836adfee96093e4c6431dcd0a1d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>A1. Nanostructures</topic><topic>A3. Metal-organic vapor phase epitaxy</topic><topic>B2. Semiconducting gallium arsenide</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Other semiconductors</topic><topic>Physics</topic><topic>Quantum wires</topic><topic>Specific materials</topic><topic>Theory and models of film growth</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bauer, J.</creatorcontrib><creatorcontrib>Gottschalch, V.</creatorcontrib><creatorcontrib>Paetzelt, H.</creatorcontrib><creatorcontrib>Wagner, G.</creatorcontrib><creatorcontrib>Fuhrmann, B.</creatorcontrib><creatorcontrib>Leipner, H.S.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bauer, J.</au><au>Gottschalch, V.</au><au>Paetzelt, H.</au><au>Wagner, G.</au><au>Fuhrmann, B.</au><au>Leipner, H.S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>MOVPE growth and real structure of vertical-aligned GaAs nanowires</atitle><jtitle>Journal of crystal growth</jtitle><date>2007</date><risdate>2007</risdate><volume>298</volume><spage>625</spage><epage>630</epage><pages>625-630</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>We studied the influence of the substrate preparation and the growth conditions important to fabricate GaAs nanowires (NWs) with metal-organic vapor phase epitaxy. The growth parameters temperature, precursor partial pressures and growth duration were investigated. The definite choice of the V/III ratio enables NW length growth independent on the diameter. By investigating the temporal evolution of the GaAs-NW growth a diameter-dependent growth rate could be determined. Applying nanosphere lithography arranged GaAs-NW arrays were achieved. The NWs morphology and real structure was investigated using (high-resolution) transmission electron microscopy and selective area diffraction. The twin formation in GaAs NWs was investigated. A crystallographic model is presented.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2006.10.082</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2007, Vol.298, p.625-630 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29366631 |
| source | Access via ScienceDirect (Elsevier) |
| subjects | A1. Nanostructures A3. Metal-organic vapor phase epitaxy B2. Semiconducting gallium arsenide Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Nanoscale materials and structures: fabrication and characterization Other semiconductors Physics Quantum wires Specific materials Theory and models of film growth Vapor phase epitaxy growth from vapor phase |
| title | MOVPE growth and real structure of vertical-aligned GaAs nanowires |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T21%3A11%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=MOVPE%20growth%20and%20real%20structure%20of%20vertical-aligned%20GaAs%20nanowires&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Bauer,%20J.&rft.date=2007&rft.volume=298&rft.spage=625&rft.epage=630&rft.pages=625-630&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2006.10.082&rft_dat=%3Cproquest_cross%3E29366631%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29366631&rft_id=info:pmid/&rft_els_id=S0022024806010797&rfr_iscdi=true |