Improvements in Growth Behavior of CVD Ru Films on Film Substrates for Memory Capacitor Integration

Ru thin films were grown by metallorganic chemical vapor deposition using a cyclopentadienylpropylcyclopentadienlylruthenium(II) on the Ta2O5, TiN, Si3N4, SiO2, TiO2 thin-film substrates and their nucleation and growth behaviors were investigated. It was observed that the bonding type between atoms...

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Veröffentlicht in:	Journal of the Electrochemical Society 2005-01, Vol.152 (1), p.C15-C19
Hauptverfasser:	Kang, Sang Yeol, Hwang, Cheol Seong, Kim, Hyeong Joon
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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