Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching

We report a novel method to fabricate GaN-based nanorod light emitting diodes (LEDs) with controllable dimension and density using self-assemble nickel (Ni) and Ni/Si 3N 4 nano-masks and inductively coupled plasma reactive ion etching (ICP-RIE). Under the fixed Cl 2/Ar flow rate of 50/20 sccm, ICP/B...

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Veröffentlicht in:	Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2004-10, Vol.113 (2), p.125-129
Hauptverfasser:	Huang, Hung-Wen, Kao, Chih-Chiang, Hsueh, Tao-Hung, Yu, Chang-Chin, Lin, Chia-Feng, Chu, Jung-Tang, Kuo, Hao-Chung, Wang, Shing-Chung
Format:	Artikel
Sprache:	eng
Schlagworte:	Gallium nitride (GaN) Inductively coupled plasma (ICP) Nanorod Nickel
Online-Zugang:	Volltext
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