Improving Organic Thin-Film Transistor Performance through Solvent-Vapor Annealing of Solution-Processable Triethylsilylethynyl Anthradithiophene
The current–voltage characteristics of triethylsilylethynyl anthradithiophene (TES ADT) thin‐film transistors can be improved dramatically by a simple and straightforward solvent‐vapor annealing process after device fabrication. Exposing the transistors to dichloroethane vapor for 2 min induces stru...
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| Veröffentlicht in: | Advanced materials (Weinheim) 2006-07, Vol.18 (13), p.1721-1726 |
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| container_title | Advanced materials (Weinheim) |
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| creator | Dickey, K. C. Anthony, J. E. Loo, Y.-L. |
| description | The current–voltage characteristics of triethylsilylethynyl anthradithiophene (TES ADT) thin‐film transistors can be improved dramatically by a simple and straightforward solvent‐vapor annealing process after device fabrication. Exposing the transistors to dichloroethane vapor for 2 min induces structural rearrangement and crystallization of TES ADT (see figure and cover). This procedure results in drastic increases in on currents; the saturation mobility increases by two orders of magnitude and the current–voltage hysteresis is largely eliminated. |
| doi_str_mv | 10.1002/adma.200600188 |
| format | Article |
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This procedure results in drastic increases in on currents; the saturation mobility increases by two orders of magnitude and the current–voltage hysteresis is largely eliminated.</description><identifier>ISSN: 0935-9648</identifier><identifier>EISSN: 1521-4095</identifier><identifier>DOI: 10.1002/adma.200600188</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><subject>Electronics ; organic ; Semiconductors ; Semiconductors, organic ; Transistors</subject><ispartof>Advanced materials (Weinheim), 2006-07, Vol.18 (13), p.1721-1726</ispartof><rights>Copyright © 2006 WILEY‐VCH Verlag GmbH & Co. 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This procedure results in drastic increases in on currents; the saturation mobility increases by two orders of magnitude and the current–voltage hysteresis is largely eliminated.</description><subject>Electronics</subject><subject>organic</subject><subject>Semiconductors</subject><subject>Semiconductors, organic</subject><subject>Transistors</subject><issn>0935-9648</issn><issn>1521-4095</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqFkE2P0zAQhi0EEmXhyjknbi7j-CPxsdqly6L9EhQ4Wq5rNwbHLna6kJ_BPyZR0YobpxlpnueV5kXoNYElAajf6l2vlzWAACBt-wQtCK8JZiD5U7QASTmWgrXP0YtSvgGAFCAW6PdVf8jpwcd9dZf3OnpTbTof8dqHvtpkHYsvQ8rVvc0u5V5HY6uhy-m476pPKTzYOOAv-jARqxitDnNQcvPpOPgU8X1Oxpait8FOcd4O3RiKD2OYtziGSZvi9M4PnU-Hzkb7Ej1zOhT76u88Q5_X7zbn7_H13eXV-eoaG1azFhsC1FFau21rG9cwJpjkUgiyNZRrSjiVux1tGWcOdEu1rsGQhpPWUMMYd_QMvTnlTv__ONoyqN4XY0PQ0aZjUbWkgjRSTuDyBJqcSsnWqUP2vc6jIqDm5tXcvHpsfhLkSfjpgx3_Q6vVxc3qXxef3Kl2--vR1fm7Eg1tuPp6e6mY_EgubtYf1C39AwscmoU</recordid><startdate>20060704</startdate><enddate>20060704</enddate><creator>Dickey, K. 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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Electronics organic Semiconductors Semiconductors, organic Transistors |
| title | Improving Organic Thin-Film Transistor Performance through Solvent-Vapor Annealing of Solution-Processable Triethylsilylethynyl Anthradithiophene |
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