The transport properties of Nb-doped trichalcogenide Ta0.8Nb0.2S3

Single crystals of TaS3 and Nb-doped Ta0.8Nb0.2S3 were grown by the usual vapor-transport method. The low-field DC resistivity, thermoelectric power, and I–V characteristics of both samples have been measured. Non-linear I–V characteristics due to possible CDW transition were found in Ta0.8Nb0.2S3 a...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2004-10, Vol.352 (1-4), p.280-284
Hauptverfasser:	Chen, X.Z., Shen, J.Q., Xu, Y., Zhou, J., Xu, Z.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge density wave Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Physics Thermoelectric and thermomagnetic effects Thermoelectric power Trichalcogenides
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Single crystals of TaS3 and Nb-doped Ta0.8Nb0.2S3 were grown by the usual vapor-transport method. The low-field DC resistivity, thermoelectric power, and I–V characteristics of both samples have been measured. Non-linear I–V characteristics due to possible CDW transition were found in Ta0.8Nb0.2S3 at temperatures up to 400K and the temperature dependence of resistivity remained insulator-like even when the temperature was as high as 400K. Possible CDW transition in Ta0.8Nb0.2S3 crystals at temperatures above 400K is suggested and need further studies to confirm.
ISSN:	0921-4526 1873-2135
DOI:	10.1016/j.physb.2004.07.021