Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography
We conducted line edge roughness (LER) measurements on resists with various sensitivities, exposed with a 75 keV 1:1 masked ion beam lithography tool. The critical dimension measurement data were treated with an algorithm for separation of mask induced roughness from random LER. The scaling analysis...
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| Veröffentlicht in: | Microelectronic engineering 2004-06, Vol.73, p.252-258 |
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| container_title | Microelectronic engineering |
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| creator | Eder-Kapl, Stefan Loeschner, Hans Zeininger, Michalea Fallmann, Wolfgang Kirch, Oliver Patsis, George P. Constantoudis, V. Gogolides, Evangelos |
| description | We conducted line edge roughness (LER) measurements on resists with various sensitivities, exposed with a 75 keV 1:1 masked ion beam lithography tool. The critical dimension measurement data were treated with an algorithm for separation of mask induced roughness from random LER. The scaling analysis approach provided the correlation length and the roughness exponent. The results indicate that for exposure doses >2.5 μC/cm
2 LER is not governed by shot noise but by the resist material properties (sensitivity, molecular weight, acid diffusion length) and development conditions. |
| doi_str_mv | 10.1016/j.mee.2004.02.049 |
| format | Article |
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2 LER is not governed by shot noise but by the resist material properties (sensitivity, molecular weight, acid diffusion length) and development conditions.</description><subject>Analysis of variance</subject><subject>Ion beam lithography</subject><subject>Line edge roughness</subject><subject>Scaling analysis</subject><subject>Shot noise</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNotkFtLxDAQhYMouK7-AN_y5FtrLr0Fn2TxBgu-6HNI02k7a9quSbvivzfLCgPDcM4ZZj5CbjlLOePF_S4dAFLBWJYykbJMnZEVr0qZ5HlRnZNV9JSJkry8JFch7FicM1atiN_iCBSaDqiflq4fIQSK4wHCjJ2ZcRppLNvDgNY490vNsHfYIjTUQ8Aw08HM4NG4QH9w7uMYvqLYg8NloMd8DWagLmpT582-_70mF220w81_X5PP56ePzWuyfX952zxuE-BFNSd1A1nVMivLghVVJuuc1coaKUqVVQJ423IuVC4sFLKEWpWCZyyX0ICslYq5Nbk77d376XuJD-kBgwXnzAjTErRQUpa8yKPx4WSEeM0BwetgEUYLDXqws24m1JzpI2e905GzPnLWTOjIWf4B4FB0mg</recordid><startdate>20040601</startdate><enddate>20040601</enddate><creator>Eder-Kapl, Stefan</creator><creator>Loeschner, Hans</creator><creator>Zeininger, Michalea</creator><creator>Fallmann, Wolfgang</creator><creator>Kirch, Oliver</creator><creator>Patsis, George P.</creator><creator>Constantoudis, V.</creator><creator>Gogolides, Evangelos</creator><general>Elsevier B.V</general><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20040601</creationdate><title>Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography</title><author>Eder-Kapl, Stefan ; Loeschner, Hans ; Zeininger, Michalea ; Fallmann, Wolfgang ; Kirch, Oliver ; Patsis, George P. ; Constantoudis, V. ; Gogolides, Evangelos</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-e168t-bde48f0c37606843b50b9ca3279482e1ff112952ce637eb97214053ede3b990c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Analysis of variance</topic><topic>Ion beam lithography</topic><topic>Line edge roughness</topic><topic>Scaling analysis</topic><topic>Shot noise</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Eder-Kapl, Stefan</creatorcontrib><creatorcontrib>Loeschner, Hans</creatorcontrib><creatorcontrib>Zeininger, Michalea</creatorcontrib><creatorcontrib>Fallmann, Wolfgang</creatorcontrib><creatorcontrib>Kirch, Oliver</creatorcontrib><creatorcontrib>Patsis, George P.</creatorcontrib><creatorcontrib>Constantoudis, V.</creatorcontrib><creatorcontrib>Gogolides, Evangelos</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Eder-Kapl, Stefan</au><au>Loeschner, Hans</au><au>Zeininger, Michalea</au><au>Fallmann, Wolfgang</au><au>Kirch, Oliver</au><au>Patsis, George P.</au><au>Constantoudis, V.</au><au>Gogolides, Evangelos</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography</atitle><jtitle>Microelectronic engineering</jtitle><date>2004-06-01</date><risdate>2004</risdate><volume>73</volume><spage>252</spage><epage>258</epage><pages>252-258</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><abstract>We conducted line edge roughness (LER) measurements on resists with various sensitivities, exposed with a 75 keV 1:1 masked ion beam lithography tool. The critical dimension measurement data were treated with an algorithm for separation of mask induced roughness from random LER. The scaling analysis approach provided the correlation length and the roughness exponent. The results indicate that for exposure doses >2.5 μC/cm
2 LER is not governed by shot noise but by the resist material properties (sensitivity, molecular weight, acid diffusion length) and development conditions.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2004.02.049</doi><tpages>7</tpages></addata></record> |
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| ispartof | Microelectronic engineering, 2004-06, Vol.73, p.252-258 |
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| language | eng |
| recordid | cdi_proquest_miscellaneous_29337165 |
| source | Elsevier ScienceDirect Journals |
| subjects | Analysis of variance Ion beam lithography Line edge roughness Scaling analysis Shot noise |
| title | Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography |
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