Microstructure and strain in thin ferroelectric BaTiO3 films epitaxially grown on MgO substrates

Microstructure and strain in thin ferroelectric BaTiO3 films epitaxially grown on MgO substrates

High-resolution x-ray diffraction and high-resolution scanning electron microscopy have been applied to characterize BaTiO3 films of different thicknesses, metal-organic chemical vapour deposition grown on MgO substrates. We found a strong correlation between the strain state of the films and the am...

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Veröffentlicht in:Journal of physics. D, Applied physics Applied physics, 2005-05, Vol.38 (10A), p.A184-A189
Hauptverfasser: Lev, U, Zolotoyabko, E, Towner, D J, Meier, A L, Wessels, B W
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Sprache:eng
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Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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container_end_page A189
container_issue 10A
container_start_page A184
container_title Journal of physics. D, Applied physics
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creator Lev, U
Zolotoyabko, E
Towner, D J
Meier, A L
Wessels, B W
description High-resolution x-ray diffraction and high-resolution scanning electron microscopy have been applied to characterize BaTiO3 films of different thicknesses, metal-organic chemical vapour deposition grown on MgO substrates. We found a strong correlation between the strain state of the films and the amount of specific material discontinuities, the latter serving as an effective channel of strain relaxation. The results obtained are explained by considering the structural misfit arising at the interface between in-plane oriented 90 deg domains.
doi_str_mv 10.1088/0022-3727/38/10A/035
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subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
title Microstructure and strain in thin ferroelectric BaTiO3 films epitaxially grown on MgO substrates
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