Bio‐inspired Two‐dimensional Nanofluidic Ionic Transistor for Neuromorphic Signal Processing
Voltage‐gated ion channels prevalent in neurons play important roles in generating action potential and information transmission by responding to transmembrane potential. Fabricating bio‐inspired ionic transistors with ions as charge carriers will be crucial for realizing neuro‐inspired devices and...
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Veröffentlicht in: | Angewandte Chemie International Edition 2024-04, Vol.63 (17), p.e202401477-n/a |
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Zusammenfassung: | Voltage‐gated ion channels prevalent in neurons play important roles in generating action potential and information transmission by responding to transmembrane potential. Fabricating bio‐inspired ionic transistors with ions as charge carriers will be crucial for realizing neuro‐inspired devices and brain‐liking computing. Here, we reported a two‐dimensional nanofluidic ionic transistor based on a MXene membrane with sub‐1 nm interlayer channels. By applying a gating voltage on the MXene nanofluidic, a transmembrane potential will be generated to active the ionic transistor, which is similar to the transmembrane potential of neuron cells and can be effectively regulated by changing membrane parameters, e.g., thickness, composition, and interlayer spacing. For the symmetric MXene nanofluidic, a high on/off ratio of ~2000 can be achieved by forming an ionic depletion or accumulation zone, contingent on the sign of the gating potential. An asymmetric PET/MXene‐composited nanofluidic transitioned the ionic transistor from ambipolar to unipolar, resulting in a more sensitive gate voltage characteristic with a low subthreshold swing of 560 mV/decade. Furthermore, ionic logic gate circuits, including the “NOT”, “NAND”, and “NOR” gate, were implemented for neuromorphic signal processing successfully, which provides a promising pathway towards highly parallel, low energy consumption, and ion‐based brain‐like computing.
Inspired by voltage‐gated ion channels in neurons, a two‐dimensional nanofluidic ionic transistor was fabricated, which operates based on the response to transmembrane potential. The device demonstrates a high on/off ratio of ~2000 and can transition from ambipolar to unipolar behavior with a low subthreshold swing of 560 mV/decade. The successful implementation of ionic logic gate circuits, including “NOT”, “NAND”, and “NOR” gates, paves a promising pathway towards ion‐based brain‐like computing. |
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ISSN: | 1433-7851 1521-3773 1521-3773 |
DOI: | 10.1002/anie.202401477 |