The effect of annealing at 1500 deg C on migration and release of ion implanted silver in CVD silicon carbide

The transport of silver in CVD (3-SiC has been studied using ion implantation. Silver ions were implanted in (3-SiC using the ATLAS accelerator facility at the Argonne National Laboratory. Ion beams with energies of 93 and 161 MeV were used to achieve deposition with peak concentrations of approxima...

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Veröffentlicht in:	Journal of nuclear materials 2006-10, Vol.357 (1-3), p.31-47
Hauptverfasser:	Maclean, H J, Ballinger, R G, Kolaya, L E, Simonson, S A
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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