In Situ Unveiling of the Resistive Switching Mechanism of Halide Perovskite-Based Memristors

The organic–inorganic halide perovskite has become one of the most promising candidates for next-generation memory devices, i.e. memristors, with excellent performance and solution-processable preparation. Yet, the mechanism of resistive switching in perovskite-based memristors remains ambiguous due...

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Veröffentlicht in:	The journal of physical chemistry letters 2024-03, Vol.15 (9), p.2453-2461
Hauptverfasser:	Luo, Hongqiang, Lu, Lihua, Zhang, Jing, Yun, Yikai, Jiang, Sijie, Tian, Yuanyuan, Guo, Zhongli, Zhao, Shanshan, Wei, Wenjie, Li, Wenfeng, Hu, Beier, Wang, Rui, Li, Shaoqun, Chen, Mengyu, Li, Cheng
Format:	Artikel
Sprache:	eng
Schlagworte:	Physical Insights into Materials and Molecular Properties
Online-Zugang:	Volltext
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