Electrical spin injection into InGa(N)As quantum structures and single InGaAs quantum dots

We investigate electrical spin injection from a semi‐magnetic n‐type ZnMnSe spin aligner into III–V p–i–n diodes with InGaAs quantum dots (QDs) in the active layer. Quantitative transmission electron microscopy techniques are applied to characterize the different dot types used. Analysis of the circ...

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Veröffentlicht in:	Physica Status Solidi (b) 2006-11, Vol.243 (14), p.3812-3824
Hauptverfasser:	Hetterich, M., Löffler, W., Fallert, J., Höpcke, N., Burger, H., Passow, T., Li, S., Daniel, B., Ramadout, B., Lupaca-Schomber, J., Hetterich, J., Litvinov, D., Gerthsen, D., Klingshirn, C., Kalt, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	72.25.Dc 72.25.Hg 72.25.Rb 75.50.Pp 78.55.Cr 85.60.Jb Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Electronics Exact sciences and technology Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Spin polarized transport
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