Rietveld-refinement study of aluminium and gallium nitrides
Powder diffraction data for fine AlN and GaN powders were collected at a Bragg–Brentano diffractometer equipped with a Johansson monochromator and a semiconductor strip detector. Rietveld-refinements were performed in order to determine the structural parameters of these wurtzite-type (space group,...
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| Veröffentlicht in: | Journal of alloys and compounds 2004-11, Vol.382 (1-2), p.100-106 |
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| container_title | Journal of alloys and compounds |
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| creator | Paszkowicz, W. Podsiadło, S. Minikayev, R. |
| description | Powder diffraction data for fine AlN and GaN powders were collected at a Bragg–Brentano diffractometer equipped with a Johansson monochromator and a semiconductor strip detector. Rietveld-refinements were performed in order to determine the structural parameters of these wurtzite-type (space group, P63mc) materials. The following crystallographic data were obtained: a = 3.11197(2)Å, c = 4.98089(4)Å, c/a =1.60056(2), u = 0.3869(5) for aluminium nitride and a = 3.28940(1)Å, c = 5.18614(2)Å, c/a = 1.62606(1), u = 0.3789(5) for gallium nitride. These structural data are discussed in the light of earlier experimental and theoretical results. |
| doi_str_mv | 10.1016/j.jallcom.2004.05.036 |
| format | Article |
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Rietveld-refinements were performed in order to determine the structural parameters of these wurtzite-type (space group, P63mc) materials. The following crystallographic data were obtained: a = 3.11197(2)Å, c = 4.98089(4)Å, c/a =1.60056(2), u = 0.3869(5) for aluminium nitride and a = 3.28940(1)Å, c = 5.18614(2)Å, c/a = 1.62606(1), u = 0.3789(5) for gallium nitride. These structural data are discussed in the light of earlier experimental and theoretical results.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2004.05.036</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Aluminium nitride ; Condensed matter: structure, mechanical and thermal properties ; Crystal structure and symmetry ; Exact sciences and technology ; Gallium nitride ; Inorganic compounds ; Lattice parameter ; Physics ; Powder diffraction ; Rietveld method ; Semiconductors ; Structure of solids and liquids; crystallography ; Structure of specific crystalline solids ; Structure refinement ; X-ray diffraction</subject><ispartof>Journal of alloys and compounds, 2004-11, Vol.382 (1-2), p.100-106</ispartof><rights>2004 Elsevier B.V.</rights><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c399t-afb7b6f710550878b4ebf217ec8dfacb0ceec0c065f6f32d345e8685cd54d8e13</citedby><cites>FETCH-LOGICAL-c399t-afb7b6f710550878b4ebf217ec8dfacb0ceec0c065f6f32d345e8685cd54d8e13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jallcom.2004.05.036$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16258292$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Paszkowicz, W.</creatorcontrib><creatorcontrib>Podsiadło, S.</creatorcontrib><creatorcontrib>Minikayev, R.</creatorcontrib><title>Rietveld-refinement study of aluminium and gallium nitrides</title><title>Journal of alloys and compounds</title><description>Powder diffraction data for fine AlN and GaN powders were collected at a Bragg–Brentano diffractometer equipped with a Johansson monochromator and a semiconductor strip detector. Rietveld-refinements were performed in order to determine the structural parameters of these wurtzite-type (space group, P63mc) materials. The following crystallographic data were obtained: a = 3.11197(2)Å, c = 4.98089(4)Å, c/a =1.60056(2), u = 0.3869(5) for aluminium nitride and a = 3.28940(1)Å, c = 5.18614(2)Å, c/a = 1.62606(1), u = 0.3789(5) for gallium nitride. These structural data are discussed in the light of earlier experimental and theoretical results.</description><subject>Aluminium nitride</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Crystal structure and symmetry</subject><subject>Exact sciences and technology</subject><subject>Gallium nitride</subject><subject>Inorganic compounds</subject><subject>Lattice parameter</subject><subject>Physics</subject><subject>Powder diffraction</subject><subject>Rietveld method</subject><subject>Semiconductors</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Structure of specific crystalline solids</subject><subject>Structure refinement</subject><subject>X-ray diffraction</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LxDAQhoMouH78BKEXvbVOmiZN8SAifoEgiJ5DmkwkpR-atAv7782yCx49zRyed17mIeSCQkGBiuuu6HTfm2koSoCqAF4AEwdkRWXN8kqI5pCsoCl5LpmUx-Qkxg4AaMPoity8e5zX2Ns8oPMjDjjOWZwXu8kml-l-GfzolyHTo82-Ust2H_0cvMV4Ro6c7iOe7-cp-Xx8-Lh_zl_fnl7u715zw5pmzrVr61a4mgLnIGvZVti6ktZopHXatGAQDRgQ3AnHSssqjlJIbiyvrETKTsnV7u53mH4WjLMafDTY93rEaYmqTJ-ISvD_QZluM14lkO9AE6YY0-fqO_hBh42ioLZOVaf2TtXWqQKuktOUu9wX6Gh074IejY9_YVFyWTZl4m53HCYta49BReNxNGh9QDMrO_l_mn4BCXGQOQ</recordid><startdate>20041117</startdate><enddate>20041117</enddate><creator>Paszkowicz, W.</creator><creator>Podsiadło, S.</creator><creator>Minikayev, R.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope><scope>7QF</scope></search><sort><creationdate>20041117</creationdate><title>Rietveld-refinement study of aluminium and gallium nitrides</title><author>Paszkowicz, W. ; Podsiadło, S. ; Minikayev, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c399t-afb7b6f710550878b4ebf217ec8dfacb0ceec0c065f6f32d345e8685cd54d8e13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Aluminium nitride</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Crystal structure and symmetry</topic><topic>Exact sciences and technology</topic><topic>Gallium nitride</topic><topic>Inorganic compounds</topic><topic>Lattice parameter</topic><topic>Physics</topic><topic>Powder diffraction</topic><topic>Rietveld method</topic><topic>Semiconductors</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Structure of specific crystalline solids</topic><topic>Structure refinement</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Paszkowicz, W.</creatorcontrib><creatorcontrib>Podsiadło, S.</creatorcontrib><creatorcontrib>Minikayev, R.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Paszkowicz, W.</au><au>Podsiadło, S.</au><au>Minikayev, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Rietveld-refinement study of aluminium and gallium nitrides</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2004-11-17</date><risdate>2004</risdate><volume>382</volume><issue>1-2</issue><spage>100</spage><epage>106</epage><pages>100-106</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>Powder diffraction data for fine AlN and GaN powders were collected at a Bragg–Brentano diffractometer equipped with a Johansson monochromator and a semiconductor strip detector. Rietveld-refinements were performed in order to determine the structural parameters of these wurtzite-type (space group, P63mc) materials. The following crystallographic data were obtained: a = 3.11197(2)Å, c = 4.98089(4)Å, c/a =1.60056(2), u = 0.3869(5) for aluminium nitride and a = 3.28940(1)Å, c = 5.18614(2)Å, c/a = 1.62606(1), u = 0.3789(5) for gallium nitride. These structural data are discussed in the light of earlier experimental and theoretical results.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2004.05.036</doi><tpages>7</tpages></addata></record> |
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| subjects | Aluminium nitride Condensed matter: structure, mechanical and thermal properties Crystal structure and symmetry Exact sciences and technology Gallium nitride Inorganic compounds Lattice parameter Physics Powder diffraction Rietveld method Semiconductors Structure of solids and liquids crystallography Structure of specific crystalline solids Structure refinement X-ray diffraction |
| title | Rietveld-refinement study of aluminium and gallium nitrides |
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